[J-5-07] Room-temperature fabrication of ionic liquid gated Zn₃N₂ electric double layer transistors with non-degenerate channel electron density

〇Kaiwen Li^1,2, Kota Hanzawa¹, Keisuke Ide¹, Kosuke Matsuzaki¹, Takayoshi Katase¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Qun Zhang², Toshio Kamiya¹ (1.Tokyo Inst. of Tech., 2.Fudan Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:05 PM - 3:12 PM |PDF Download

[J-5-08] Transparent ZnO Thin Film Transistors Fully Fabricated by Atomic-Layer-Deposition Process

Junchen Dong^1,2, Jingyi Wang¹, Qi Li¹, Dengqin Xu¹, 〇Jingye Xie², Kai Zhao², Dedong Han¹, Yi Wang¹, Xing Zhang¹ (1.Peking Univ., 2.Beijing Info. Sci. & Tech. Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:12 PM - 3:19 PM |PDF Download

[J-6-01 (Invited)] Multilayer metal oxide transistors manufactured with light

〇Thomas Anthopoulos¹ (1.KAUST)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 3:45 PM - 4:15 PM |PDF Download

[J-6-02] Prediction of P-type conductivity in SnTa2O6

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1.Cambridge Univ., 2.Wuhan Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:15 PM - 4:22 PM |PDF Download

[J-6-03] IGZO front-gated TFTs for 3D DRAMs: Process and device advancement

〇Nouredine Rassoul¹, Subhali Subhechha¹, Kaustuv Banerjee¹, Attilio Belmonte¹, Gabriele Donadio¹, Harinarayanan Puliyalil¹, Murat Pak¹, Ming Mao¹, Lieve Teugels¹, Diana Tsvetanova¹, Shreya Kundu¹, Nina Bazzazian¹, Harold Dekkers¹, Michiel van Setten¹, Adrian Chasin¹, Jef Geypen¹, Jeroen Heijlen¹, Davide Crotti¹, Luca Di Piazza¹, Ludovic Goux¹, Romain Delhougne¹, Gouri Sankar Kar¹ (1.IMEC)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:22 PM - 4:29 PM |PDF Download

[J-6-04] Pseudocapacitance in High-Mobility Thin-Film Transistors with Solution-Processed Aluminia

Chuan Liu¹, Yanli Pei¹, 〇Xiaoci Liang¹ (1.Sun Yat-sen Univ.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:29 PM - 4:36 PM |PDF Download

[J-6-05] Fully Solution-Processed Self-Aligned Amorphous InZnO Thin-Film Transistors by Continuous Wave Green Laser Irradiation

〇Dianne Cabrejas Corsino¹, Juan Paolo Soria Bermundo¹, Muhammad Arif Razali¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:36 PM - 4:43 PM |PDF Download

[J-6-06] Challenge of Using Mist-CVD for Preparation of Ag_xO / Zn_1-xMg_xO Schottky Diodes

〇Xiaojiao Liu¹, Giang T. Dang^1,2,3, Li Liu^1,2,3, Tatsuya Yasuoka¹, Yoshiro Kawanishi², Toshiyuki Kawaharamura^1,2,3 (1.Eng. Course, Graduate School of Engineering, Kochi Univ. of Tech., 2.School of Systems Engineering, Kochi Univ. of Tech., 3.Center for Nanotechnology, Res. Inst., Kochi Univ. of Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:43 PM - 4:50 PM |PDF Download

[J-6-07] Epitaxial Growth of Indium-Gallium-Oxide-Alloy Thin Films on AlN Templates by Mist Chemical Vapor Deposition

〇Yuri Ogura¹, Yuta Arata¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:50 PM - 4:57 PM |PDF Download

[J-6-08] β-Ga₂O₃ thin film epitaxially grown on GaN templates by low cost mist CVD and its application on MOSFET and Schottky barrier diode

〇Yu - Xu¹ (1.Univ. of Xi'dian )

2021 International Conference on Solid State Devices and Materials |Wed. Sep 8, 2021 4:57 PM - 5:04 PM |PDF Download