The Japan Society of Applied Physics

382 results (51 - 60)

[A-8-01] Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications

〇Satoru Ohshita1, Hidefumi Rikimaru1, Kazuki Tsuda1, Hiromichi Godo1, Yoshiyuki Kurokawa1, Yoshinori Ando1, Hiromi Sawai1, Yasumasa Yamane1, Shunpei Yamazaki1, Toru Nakura2, Hiroshi Yoshida3, Kuo-Chang Huang3, Miller Liao4, Shou-Zen Chang3 (1.Semiconductor Energy Laboratory Co., Ltd., 2.Fukuoka Univ., 3.Powerchip Semiconductor Manufacturing Corp., 4.National Taiwan Univ.)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 10:45 AM - 10:52 AM |PDF Download

[A-8-03] Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG

Yuki - Ito1, 〇Toshiki - Hamada1, Yoshinori - Ando1, Masahiro - Takahashi1, Tsutomu - Murakawa1, Hitoshi - Kunitake1, Masaharu - Kobayashi2, Kuo Chang Huang3, Hiroshi - Yoshida3, Miller - Liao4, Shou Zen Chang3, Shunpei - Yamazaki1 (1.Semiconductor Energy Laboratory Co., Ltd., 2.d.lab, School of Engineering, the University of Tokyo, 3.Powerchip Semiconductor Manufacturing Corporation, 4.National Taiwan University)

2021 International Conference on Solid State Devices and Materials |Thu. Sep 9, 2021 10:59 AM - 11:06 AM |PDF Download

[B-2-01 (Invited)] Co-integration of ReRAM with OTS back-end selector for high density Crosspoint arrays

〇Gabriel Molas1, Joel Minguet Lopez1, Laurent Grenouillet1, Catherine Carabasse1, Lucas Reganaz1, Gabriele Navarro1, Chiara Sabbione1, Mathieu Bernard1, Niccolo Castellani1, Damien Deleruyelle3, Marc Bocquet2, Jean-Michel Portal2, Nazim Ait Abdelkader 4, Quentin Rafhay4, François Andrieu1 (1.CEA-Leti, 2.IM2NP CNRS, France, 3.INL CNRS, France , 4.IMEP LAHC CNRS, France)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 3:45 PM - 4:15 PM |PDF Download

[B-2-03] Unipolar Switching based Antiferroelectric HfZrO2 Diode beyond Endurance > 1011 Cycles with Low Operation Voltage for FeRAM Application

〇Kuo-Yu Hsiang1,2, C.-Y. Liao1, Y.-Y. Lin1, J.-H. Liu1, S.-H. Chang1, F.-C. Hsieh1, S.-H. Chiang1, H. Liang1, C.-Y. Lin1, Z.-F. Lou1, T.-C. Chen3, C.-S. Chang3, M. H. Lee1 (1.National Taiwan Normal University, 2.National Yang Ming Chiao Tung University, 3.Taiwan Semiconductor Manufacturing Company)

2021 International Conference on Solid State Devices and Materials |Tue. Sep 7, 2021 4:22 PM - 4:29 PM |PDF Download

382 results (51 - 60)