The Japan Society of Applied Physics

382件中(81 - 90)

[B-6-05] Comparison of electrical properties of indium-tin-oxide channel ferroelectric-gate thin film transistors using solution processed and sputtered Hf-Zr-O

〇Mohit Mohit1、Shinji Migita2、Hiroyuki Ota2、Yukinori Morita2、Eisuke Tokumitsu 1 (1.Japan Advanced Institute of Science and Technology 、2.National Institute of Advanced Industrial Science and Technology )

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:36 〜 16:43 |PDF ダウンロード

382件中(81 - 90)