The Japan Society of Applied Physics

633件中(311 - 320)

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

Kento Narita1, Kosuke Ota1, Yu Fu1, Chiyuki Wakabayashi1, Atushi Hiraiwa1, Hiroshi Kawarada1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:15 〜 11:30 |PDF ダウンロード

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

Xuezhen Jia1, Yukiko Suzuki1, Sukeyasu Deguchi2, Fuga Asai1, Akira Takahashi1, Atsushi Hiraiwa1, Junichi Kaneko2, Hiroshi Kawarada1,3 (1. School of Fundamental Science and Engineering Waseda Univ. (Japan), 2. School of Engineering Hokkaido Univ. (Japan), 3. Kagami Memorial Reasearch Inst. for Materials Science and Technology, Waseda Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:30 〜 11:45 |PDF ダウンロード

[SO-PS-01-03] Effects of HfO2 and ZrO2 Seed Layers on the Transition from Antiferroelectric (AFE) to Ferroelectric (FE) of Rich Zr Composition HfO2-based Film

Peilin Zeng1, Yue Peng1, Wenwu Xiao2, Yan Liu1, Genquan Han1,3, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key aboratory,School of Microelectronics.Xidian University (China), 2. Xi’an UnilC Semiconductors CompanyLtd. (China), 3. Hangzhou Institute of Technology.Xidian University, Hangzhou (China))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:34 〜 13:36 |PDF ダウンロード

633件中(311 - 320)