[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

^○Yunosuke Sano¹, Wataru Yasuda¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tech. (Japan), 3. Fukuoka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:00 〜 14:15 |PDF ダウンロード

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing

^○Hideaki Tanimura¹, Yuto Ota², Hikaru Kawarazaki¹, Shinichi Kato¹, Takumi Mikawa¹, Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 2. Univ. of Hyogo (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:15 〜 14:30 |PDF ダウンロード

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure

^○Eun-Ki Hong¹, Shun-ichiro Ohmi¹, Secrytary Ohmi¹ (1. Tokyo Institute of Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:30 〜 14:45 |PDF ダウンロード

[M-7-06] High-quality Multilayer Graphene Formed by Layer Exchange with Alloy Catalysts

^○Reno Ito¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:45 〜 15:00 |PDF ダウンロード

[M-7-07 (Late News)] Significant Difference in Ferroelectric Phase Formation Kinetics in Post-deposition and Post-metallization Annealing of HZO Films

^○Tianning - Cui¹, Zhipeng - Xue¹, Danyang - Chen¹, Yuyan - Fan¹, Jingquan - Liu¹, Xiuyan - Li¹ (1. Shanghai Jiao Tong University (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:00 〜 15:15 |PDF ダウンロード

[N-1-01 (Invited)] Vertical GaN devices - Performance and Availability

^○Dinesh Ramanathan¹ (1. NexGen powersystems (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:00 〜 14:30 |PDF ダウンロード

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

^○Katsunori Ueno¹, Turugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1. Fuji Electric Co., Ltd. (Japan), 2. Tohoku Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:30 〜 14:45 |PDF ダウンロード

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

^○Yuki Ichikawa¹, Katsunori Ueno², Tsurugi Kondo², Ryo Tanaka², Shinya Takashima², Jun Suda¹ (1. Univ. of Nagoya (Japan), 2. Corp. of Fuji Electric (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:45 〜 15:00 |PDF ダウンロード

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

^○Seiya Kawasaki¹, Hirotaka Watanabe¹, Kentaro Nonaka², Tomohiko Sugiyama², Yoshitaka Kuraoka², Shugo Nitta¹, Atsushi Tanaka¹, Yoshio Honda¹, Hiroshi Amano¹ (1. Nagoya Univ. (Japan), 2. NGK Insulators, Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:00 〜 15:15 |PDF ダウンロード

[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface

^○Zijun Zhou¹, Akio Ohta², Xiaoyu Tian¹, Noriyuki Taoka³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:15 〜 15:30 |PDF ダウンロード