Investigation of EOT scaling of HfO2/Al2O3/SiGe gate stack by plasma post-nitridation

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

2:45 PM - 3:00 PM

^○(M2C)Jaehoon Han¹, Rui Zhang¹, Takenori Osada², Masahiko Hata², Mitsuru Takenaka¹, Shinichi Takagi¹ (Univ. of Tokyo¹, Sumitomo Chemical Co. Ltd.²)

Keywords:SiGe,MOS界面,ECRプラズマ後窒化