Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[28p-G11-1~18] 14.3 Electron devices and Process technology

Thu. Mar 28, 2013 2:00 PM - 6:45 PM G11 (B5 2F-2205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G11-0] Lunch(90min)

[28p-G11-1] Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs with a High-k Passivation Layer

^○Hideyuki Hanawa¹, Atsushi Nakajima¹, Kazushige Horio¹ (Shibaura Inst. Tech.¹)

[28p-G11-2] Proposal of Effective Acceptor Levels for Simulating Current/Voltage Characteristics of GaN Bipolar Devices

^○Kazuhiro Mochizuki¹, Tomoyoshi Mishima², Yuya Ishida³, Yoshitomo Hatakeyama³, Kazuki Nomoto³, Naoki Kaneda², Tadayoshi Tsuchiya², Akihisa Terano¹, Tomonobu Tsuchiya¹, Hiroyuki Uchiyama¹, Shigehisa Tanaka¹, Tohru Nakamura³ (Hitachi, Ltd.¹, Hitachi Cable, Ltd.², Hosei Univ.³)

[28p-G11-3] High Temperature Characteristics in AlGaN/GaN Open-Gate HFET with Recessed-Gate Enhanced-Barrier Structures

^○Narihiko Maeda¹, Masanobu Hiroki², Satoshi Sasaki², Yuichi Harada² (NTT Photonics Labs.¹, NTT Basic Research Labs.²)

[28p-G11-4] Study on MISFETs with Ion Implanted Isolation Layers on p-GaN substrate

^○Hayao Kasai¹, Hiroki Ogawa¹, Takeshi Kasai², Tohru Nakamura¹ (Hosei university¹, Chemitronics²)

[28p-G11-5] Ion-Implanted Metal Gate GaN MISFETs

^○（M1C）Hiroki Ogawa¹, Hayao Kasai¹, Takeshi Kasai², Tohru Nakamura¹ (Hosei University¹, Chemitronics²)

[28p-G11-6] ▲Field Isolation of GaN MOSFET by Boron Ion Implantation

^○Ying Jiang^1,2, Qingpeng Wang^1,2, Kentaro Tamai¹, Satoko Shinkai³, Takahiro Miyashita⁴, Shin-Ichi Motoyama⁴, Dejun Wang², Jin-Ping Ao¹, Yasuo Ohno¹ (The Univ. of Tokushima¹, Dalian Univ. of Tech.², Kyushu Inst. of Tech.³, SAMCO Inc.⁴)

[28p-G11-7] Electrical Characteristics of AlGaN/GaN Devices with La₂O₃ Gate Dielectrics on Annealing Temperature

^○Guoqiang Lu¹, Jiangning Chen¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

[28p-G11-8] Electrical characteristics of AlGaN/GaN MIS-HEMTs with Al₂O₃ deposited by ALD

^○（B）Yusuke Yoshida¹, Yasuhiro Iwata¹, Joseph Freedsman¹, Toshiharu Kubo¹, Takashi Egawa¹ (Nagoya Inst. Tech.¹)

[28p-G11-9] Illumination and Temperature Effects on AlGaN / GaN HFET Side-gating Effect

Yusuke Kio¹, Yusuke Ikawa¹, Jin-Ping Ao¹, ^○Yasuo Ohno¹ (The Univ. Tokushima¹)

[28p-G11-10] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

[28p-G11-10.1] Break(15min)

[28p-G11-11] △Effects of nitridation on gate oxide for SiC trench MOSFETs

^○Keiko Ariyoshi^1,2, Shinsuke Harada^1,3, Junji Senzaki^1,3, Takahito Kojima^1,4, Kazutoshi Kojima^1,3, Yasunori Tanaka^1,3, Takashi Shiohe^1,2 (FUPET¹, Toshiba Corp.², AIST³, Fuji Electric Co., Ltd⁴)

[28p-G11-12] △Low resistive GaInN tunnel junction devices

^○（M1）Takatoshi Morita¹, Mitsuru Kaga¹, Yuka Kuwano¹, Kenjo Matsui¹, Masahiro Watanabe¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (meijo Univ.¹, Nagoya Univ.²)

[28p-G11-13] △Growth Temperature Dependence of β-Ga₂O₃ Homoepitaxial MBE Growth

^○Kohei Sasaki^1,2, Masataka Higashiwaki^2,3, Akito Kuramata¹, Takekazu Masui⁴, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², JST PRESTO³, Koha Co., Ltd.⁴)

[28p-G11-14] Ohmic Contact Formation on β-Ga₂O₃ Using Sn Ion Implantation

^○Kohei Sasaki^1,2, Masataka Higashiwaki^2,3, Akito Kuramata¹, Takekazu Masui⁴, Shigenobu Yamakoshi¹ (Tamura Corp.¹, NICT², JST PRESTO³, Koha Co., Ltd.⁴)

[28p-G11-15] Al₂O₃/n-Ga₂O₃ MOS diodes

^○Masataka Higashiwaki^1,2, Krishnamurthy Daivasigamani¹, Kohei Sasaki^1,3, Akito Kuramata³, Takekazu Masui⁴, Shigenobu Yamakoshi³ (NICT¹, JST PRESTO², Tamura Corp.³, Koha Co., Ltd.⁴)

[28p-G11-16] ▲Oxide Thickness Dependency on Threshold Voltage of GaN MOSFETs on AlGaN/GaN Heterostructure

^○(D)Qingpeng Wang^1,2, Ying Jiang^1,2, Kentaro Tamai¹, Takahiro Miyashita³, Shin-ichi Motoyama³, Dejun Wang², Jin-Ping Ao¹, Yasuo Ohno¹ (The Univ. of Tokushima¹, Dalian Univ. of Tech.², SAMCO Inc.³)

[28p-G11-17] Influence of InAlN Spacer on Electrical Properties of AlGaN/GaN Heterostructure

^○Kentaro Mori¹, Arata Watanabe¹, tatsuya Ito¹, Takashi Egawa¹ (Nagoya Inst.of Tech.¹)

[28p-G11-18] 2D Device Simulation of a Low Cost and Normally-Off Zinc Oxide Power Field Effect Transistor

^○Satoshi Kobayashi¹ (RECRUIT STAFFING CO.,LTD.¹)

Session information

[28p-G11-1~18] 14.3 Electron devices and Process technology