[28a-G19-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28a-G19-7] Electrical Characteristics of Low-temperature Grown ZnO Films Deposited by Non-equilibrium Atmospheric Pressure Plasma

^○Yukinori Nose¹, Takuma Terakawa¹, Tatsuru Nakamura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, Sekisui Chemical Co. Ltd.²)

Keywords:ZnO、Non-equilibrium Atmospheric Pressure Plasma、CVD