[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-16] Current-voltage characteristics in a Pt/ZnO Schottky photodiode

^○Haruyuki Endo¹, Ritsuo Ohashi², Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba³ (Iwate Ind. Res. Inst.¹, EMC Semiconductor Corporation², Iwate Univ.³)

Keywords:Ultraviolet sensor、ZnO、Avalanche Multiplication