[29a-B4-1~11] 5.1 Semiconductor laser, Light emitter / Photodetector

[29a-B4-2] Fabrication and Evaluation of Far infrared Detectors using Low Compensation Ratio GaAs Grown by LPE.

^○Tomokazu Nishimoto¹, Yoshihito Yokoyama², Hiroshi Murakami³, Osamu Abe¹, Moriaki Wakaki² (Jasco¹, Tokai Univ.², ISAS/JAXA³)

Keywords:遠赤外、検出器、GaAs