[17p-E5-1~13] 15.6 IV-group-based compounds

△ [17p-E5-3] Relationship between growth conditions and stacking fault density in growth of epitaxial layers on 4H-SiC C-face substrates with vicinal off-angle of lower than 1°

^○Keiko Masumoto^1,2, Sachiko Ito^1,2, Hirokuni Asamizu^1,3, Kentaro Tamura^1,3, Chiaki Kudou^1,4, Johji Nishio^1,5, Kazutoshi Kojima^1,2, Toshiyuki Ohno^1,6, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³, Panasonic⁴, Toshiba⁵, Hitachi⁶)

Keywords:SiC,エピタキシャル,C面