[13p-4C-1~9] Ge-CMOSはどこまで進んでいるのか

▲ [13p-4C-9] Germanium for advanced CMOS transistors: Status and Trends

〇Jerome Mitard¹, Liesbeth Witters¹, Hiro Arimura¹, Yuichiro Sasaki¹, Alexei Milenin¹, Roger Loo¹, Andriy Hikavyy¹, Geert Eneman¹, Pieter Lagrain¹, Hans Mertens¹, Sonja Sioncke¹, Christa Vrancken¹, Hugo Bender¹, Naoto Horiguchi¹, Anda Mocuta¹, Nadine Collaert¹, Aaron Thean¹ (1.Imec, Kapeldreef 75, B-3001 Leuven, Belgium)

キーワード：Germanium,FinFETs,CMOS

In this work, we will investigate the “all-Ge” CMOS option namely a heterogeneous integration of strained Ge and relaxed SiGe for the PMOS and subsequently, a fully-relaxed Ge channel for the NMOS. The choice of these materials will first be justified byTCAD simulations. The integration challenges of both transistor types will be screened with a specific focus on channel passivation, Source/Drain engineering and contact formation. Experimental data from our advanced test vehicle will be shown before drawing first conclusions about the strong and weak points of both Ge-based MOSFETs.