[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

[16a-4C-9] Hall-effect measurement of lightly-doped p-type homoepitaxial GaN

〇Masahiro Horita¹, Shinya Takashima², Ryo Tanaka², Katsunori Ueno², Masaharu Edo², Jun Suda¹ (1.Kyoto Univ., 2.Fuji Electric)

Keywords:gallium nitride,Hall effect,lightly doped p-type