Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TOYODA GOSEI)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

1:15 PM - 1:45 PM

[5p-A301-1] [JSAP Paper Award Speech] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors

〇Kazuki Ikeyama¹, Yugo Kozuka¹, Kenjo Matsui¹, Shotaro Yoshida¹, Takanobu Akagi¹, Yasuto Akatsuka¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki¹ (1.Meijo Univ.)

1:45 PM - 2:00 PM

△ [5p-A301-2] Low resistive GaN tunnel junctions grown by MOVPE

〇(M1)Ryota Fuwa¹, Yasuto Akatsuka¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac. Sci.and Eng., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

2:00 PM - 2:15 PM

△ [5p-A301-3] Fabrication a low-temperature-grown p-side structure LED with tunnel junction

〇(M1)Junya Yoshinaga¹, Tatsuya Ichikawa¹, Kenta Suzuki¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [5p-A301-4] Nitride-based buried tunnel junctions towards VCSELs

〇Yasuto Akatsuka¹, Ryota Fuwa¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac.Sci.&Eng.,Meijo Univ., 2.Akasaki Research Center,Nagoya Univ.)

2:30 PM - 2:45 PM

△ [5p-A301-5] n-type conducting AlInN/GaN distributed Bragg reflector with graded structure

〇Wataru Muranaga¹, Takanobu Akagi¹, Shotaro Yoshida¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ, 2.Nagoya Univ)

2:45 PM - 3:00 PM

△ [5p-A301-6] Deep ultraviolet laser using graded AlGaN cladding layer

〇Yuta Kawase¹, jyunnya Hakamata¹, Takahumi Hayashi¹, Jyunnya Ikeda¹, Syo Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

3:15 PM - 3:30 PM

[5p-A301-7] Shape control of selective area growth of GaN for applying to three-dimensional channel transistors

〇(M2)Hiroki Kuroiwa¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

3:30 PM - 3:45 PM

△ [5p-A301-8] Laser Induced Activation of Mg doped GaN and the Local Control of the Activation

〇(M1)Kouta Matsumoto¹, Noriko Kurose², Takafumi Shimono¹, Naotaka Iwata¹, Fumihiko Yamada¹, Itaru Kamiya¹, Yoshinobu Aoyagi² (1.Toyota Inst., 2.Ritsumei Univ.)

3:45 PM - 4:00 PM

[5p-A301-9] UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial layer

〇Zehua Wang², Hiroshi Nakai², Sugiyama Mutsumi², Chichibu Shigefusa¹ (1.IMRAM, Tohoku Univ., 2.Faculty of Sci. and Tech. / Tokyo Univ. of Sci.)

4:00 PM - 4:15 PM

△ [5p-A301-10] Optimization of 2DEG concentration and the electrode in AlGaN/AlGaN-based UV photosensors

〇(M2)Saki Ushida¹, Akira Yoshikawa^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Fac. Sci & Tec., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ, 3.Asahi-Kasei)

4:15 PM - 4:30 PM

[5p-A301-11] AlGaN/AlGaN-based extremely high-photosensitive solar-blind sensor

〇Akira Yoshikawa^1,3, Saki Ushida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo University, 2.Akasaki Research Center, 3.Asahi-Kasei)

4:30 PM - 4:45 PM

▲ [5p-A301-12] Analysis of Current Leakage in AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

〇GUODONG HAO¹, Taniguchi Manabu¹, Inoue Shin-ichiro¹ (1.NICT)

4:45 PM - 5:00 PM

▲ [5p-A301-13] Exceeding 30% IQE of AlGaN quantum well 304 nm UVB emission and single peak operation of 326nm UV LED

〇Muhammad Ajmal Khan¹, Yuri Itokazu^1,2, Takuma Matsumoto^1,2, Noritoshi Maeda¹, Masafumi Jo¹, Hideki Hirayama¹, Norihiko Kamata² (1.RIKEN, Wako, Saitama 351-0198, JAPAN, 2.Saitama University, Saitama 338-8570, JAPAN)

5:15 PM - 5:30 PM

[5p-A301-14] Impact on electroluminescence of AlGaN-based deep ultraviolet LED grown on macrosteps (part 1)

〇Akira Hirano¹, Michiko Kaneda¹, Yosuke Nagasawa¹, Masamichi Ippommatsu¹, Yoshio Honda^2,3, Hiroshi Amano², Isamu Akasaki^3,4 (1.UV Craftory Co., Ltd., 2.Nagoya Univ. -IMaSS, 3.Nagoya Univ. -ARC, 4.Meijo Univ.)

5:30 PM - 5:45 PM

[5p-A301-15] Impact on electroluminescence of AlGaN-based deep-ultraviolet LED grown on macrosteps (part 2)

〇Yosuke Nagasawa¹, Michiko Kaneda¹, Akira Hirano¹, Masamichi Ipponmatsu¹, Yoshio Honda², Hiroshi Amano², Isamu Akasaki^3,4 (1.UV Craftory, 2.Nagoya Univ. - IMass, 3.Nagoya Univ. - ARC, 4.Meijo Univ.)

5:45 PM - 6:00 PM

[5p-A301-16] Achievement of high-EQE(9%) AlGaN deep-UV LED by optimizing thickness of Ni in highly reflective Ni/Al electrode

〇Noritoshi Maeda¹, Masafumi Jo¹, Yukio Kashima^1,2, Eriko Matsuura^1,2, Hideki Takagi³, Takeshi Iwai⁴, Toshiro Morita⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Ryuichiro Kamimura⁶, Yamato Osada⁶, Hideki Hirayama¹ (1.RIKEN, 2.Marubun, 3.AIST, 4.ToKyo Ohka Kogyo, 5.Toshiba Machine, 6.ULVAC)

6:00 PM - 6:15 PM

[5p-A301-17] Achievement of high-EQE(10%)AlGaN deep-UV LED using highly-reflective PhC

〇Yukio Kashima^1,2, Noritoshi Maeda¹, Eriko Matsuura^1,2, Masafumi Jo¹, Takeshi Iwai³, Toshiro Morita³, Mitsunori Kokubo⁴, Takaharu Tashiro⁴, Ryuichiro Kamimura⁵, Yamato Osada⁵, Hideki Takagi⁶, Hideki Hirayama¹ (1.RIKEN, 2.Marubun, 3.Tokyo Ohka, 4.Toshiba Machine, 5.ULVAC, 6.AIST)

6:15 PM - 6:30 PM

[5p-A301-18] Damage-less fine control fabrication of highly-reflective PhC for AlGaN deep-UV LED

〇Yukio Kashima^1,2, Takaharu Tashiro³, Mitsunori Kokubo³, Ryuichiro Kamimura⁴, Yamato Osada⁴, Takeshi Iwai⁵, Toshiro Morita⁵, Eriko Matsuura^1,2, Noritoshi Maeda¹, Masafumi Jo¹, Hideki Takagi⁶, Hideki Hirayama¹ (1.RIKEN, 2.Marubun, 3.Toshiba Machine, 4.ULVAC, 5.Tokyo Ohka, 6.AIST)

6:30 PM - 6:45 PM

[5p-A301-19] High WPE (9.6%) AlGaN deep-UV LED using transparent contact layer and lens

〇Hideki Hirayama¹, Yukio Kashima^1,2, Eriko Matsuura^1,2, Hideki Takagi³, Noritoshi Maeda¹, Masafumi Jo¹, Takeshi Iwai⁴, Toshiro Morita⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Ryuichiro Kamimura⁶, Yamato Osada⁶ (1.RIKEN, 2.Marubun, 3.AIST, 4.Tokyo Ohka Kogyo, 5.Toshiba Machine, 6.ULVAC)

Session information