[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

[5p-C17-16] Surface-morphology related current-density inhomogeneity in p⁺-n GaN diodes on GaN substrates

〇Kentarou Hayashi¹, Hiroshi Ohta¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Hajime Fujikura², Kenji Shiojima³, Thoru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS, 3.Fukui Univ.)

Keywords:gallium nitride, pn junction, morphology

Current inhomogeneity under anode electrodes of GaN p-n diodes which was found by EL mappings were strongly correlated with surface morphologies of the GaN epitaxial layers. In addition to lateral Mg distribution in the p-GaN layer which we reported last year, C distribution in the n-GaN layer has been clarified to affect the current inhomogeneity.