[7a-C21-1~13] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [7a-C21-12] Characterization of (100) Surface Oriented Poly-Si Thin Films with Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

〇(DC)Thuy Thi Nguyen¹、Mitsuhisa Hiraiwa¹、Tomoyuki Koganezawa²、Satoshi Yasuno²、Shin-Ichiro Kuroki¹ (1.Hiroshima Univ.、2.SPring-8)

キーワード：poly-Si thin film, CLC

(100) surface oriented poly-Si thin films have been highly demanded for high performance LTPS-TFTs. Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, we succeeded in controlling the (100) surface orientation of the poly-Si thin films. A high (100) surface orientation of the poly-Si thin film being comparable to that of the (100)Si single crystal was noticeably observed by 2-dimension X-ray diffraction. The orientation was significantly varied with the laser scanning speed. The results suggest that the orientation of the poly-Si thin film can be controlled at the low laser energy regime approximately the melting energy of the Si.