Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 1:30 PM - 6:00 PM D103 (56-103)

Toshiyuki Isshiki(Kyoto Inst. Tech.), Johji Nishio(Toshiba)

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1:30 PM - 1:45 PM

[19p-D103-1] [Young Scientist Presentation Award Speech] Structural analysis of basal-plane dislocations to be origins of stacking fault expansion in forward degradation of 4H-SiC PiN diodes

〇Shohei Hayashi^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Masaki Miyazato^1,4, Masaaki Miyajima^1,4, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST, 2.Toray Research Center Inc., 3.SHOWA DENKO K.K., 4.Fuji Electric Co. Ltd.)

1:45 PM - 2:00 PM

[19p-D103-2] Analysis of stacking fault expansion in forward current degradation of 4H-SiC PiN diodes with transparent conductive oxide electrode

〇Hirokuni Asamizu^1,2, Junichi Nishino¹, Junji Senzaki¹, Kazutoshi Kojima¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST, 2.Rohm Co.,Ltd.)

2:00 PM - 2:15 PM

△ [19p-D103-3] Reaction Pathway Analysis for Conversion of Screw Basal Plane Dislocation to Threading Edge Dislocation in 4H-SiC

〇Yohei Tamura¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

2:15 PM - 2:30 PM

△ [19p-D103-4] Simulation of Single Shockley stacking faults extention in 4H-SiC by Ginzburg Landau equation

〇Akira Kano¹, Akihiro Goryu¹, Mitsuaki Kato¹, Kenji Hirohata¹ (1.TOSHIBA)

2:30 PM - 2:45 PM

[19p-D103-5] SiC Epitaxial Reactor Repetitive Cleaning Using ClF₃ Gas and Pyrolytic Carbon-Coated Susceptor

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

2:45 PM - 3:00 PM

△ [19p-D103-6] Growth and warpage reduction of thick 4H-SiC epitaxial layers

〇Keiko Masumoto¹, Satoshi Segawa^1,2, Toshiyuki Ohno³, Shingo Saito¹, Kazutoshi Kojima¹, Tomohisa Kato¹, Hajime Okumura¹ (1.AIST, 2.Asahi Diamond, 3.Hitachi)

3:00 PM - 3:15 PM

△ [19p-D103-7] Study on high boron and nitrogen co-doping in 6H-SiC single layer by closed sublimation growth

〇(B)Daiki Tanaka¹, Hiroaki Kurokawa¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research center , Nagoya Univ.)

3:15 PM - 3:30 PM

△ [19p-D103-8] Nitrogen doping in 4H-SiC by laser ablation of a SiNx film

〇Toshifumi Kikuchi^1,2, Kaname Imokawa^1,2, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Hiroshi Ikenoue^1,2 (1.ISEE, Kyushu Univ., 2.NEXT GLP, Kyushu Univ.)

3:45 PM - 4:00 PM

[19p-D103-9] Analysis of Anisotropic Ionization Coefficient in Bulk 4H-SiC with Full-Band Monte Carlo Simulation

〇Ryusei Fujita¹, Yoshiki Ueoka¹, Takao Kotani², Yoshinari Kamakura¹, Nobuya Mori¹ (1.Osaka Univ., 2.Tottori Univ.)

4:00 PM - 4:15 PM

[19p-D103-10] Creation of coler centers in SiC pin dildes using proton beam writing

〇(B)Yoji Chiba^1,2, Hiroki Tsunemi^1,2, Tomoya Honda^1,2, Takahiro Makino², Shin-ichiro Sato², Naoto Yamada², Takahiro Sato², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

4:15 PM - 4:30 PM

▼ [19p-D103-11] Magnetic Field Sensing with Silicon Vacancy in 4H-SiC under Ambient Conditions

〇(M1)Tuan Minh Hoang¹, Takeshi Ohshima², Yuta Masuyama¹, Takayuki Iwasaki¹, Digh Hisamoto¹, Mutsuko Hatano¹ (1.Tokyo Tech, 2.QST)

4:30 PM - 4:45 PM

△ [19p-D103-12] Theoretical Analysis of Carrier Lifetimes in SiC by using Rate Equations

〇Shoma Yamashita¹, I. D. Booker¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:45 PM - 5:00 PM

△ [19p-D103-13] Evaluation of lifetime for SiC-PiN diode using OCVD

〇Kou Amano¹, Munetaka Noguchi², Hiroshi Watanabe², Mutsuko Hatano¹, Tetsuo Kodera¹ (1.Toko Univ., 2.Mitsubishi Electric Corp.)

5:00 PM - 5:15 PM

[19p-D103-14] Surface recombination velocity for the non-polar face of 4H-SiC

〇Xinchi Zhang¹, Kouyou Kohama¹, Masaya Ichimura¹, Masashi Kato¹ (1.NIT)

5:15 PM - 5:30 PM

[19p-D103-15] Temperature Dependence of the Carrier Lifetimes in 4H-SiC Epitaxial Layers

〇Mitsuhiro Kushibe¹, Akira Miyasaka^2,3, Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹, Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³ (1.Toshiba Corporation, 2.SHOWA DENKO K.K., 3.Advanced Industrial Science and Technology)

5:30 PM - 5:45 PM

[19p-D103-16] Comparison of Activation Energies of Hall Coefficient and Resistivity in Heavily Al-doped 4H-SiC

〇Rinya Nishihata¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

5:45 PM - 6:00 PM

[19p-D103-17] Influence of N Codoping on Resistivity in Heavily Al-doped p-type 4H-SiC

〇Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

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