一般セッション(口頭講演)

[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

2019年9月20日(金) 10:45 〜 12:30 E216 (E216)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+全てマイスケジュールに登録

10:45 〜 11:00

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

〇Shinji Isogami¹、 Youhei Shiokawa²、 Atsushi Tsumita²、 Tomohiro Taniguchi³、 Seiji Mitani¹、 Tomoyuki Sasaki²、 Masamitsu Hayashi^1,4 (1.NIMS、2.TDK、3.AIST、4.Univ. of Tokyo)

11:00 〜 11:15

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

〇(D)Miao JIANG¹、 Hirokatsu Asahara¹、 Shoichi Sato¹、 Shinobu Ohya^1,2,3、 Masaaki Tanaka^1,2 (1.Dept. of Electrical Engineering, The Univ. of Tokyo、2.CSRN, Graduate School of Engineering, The Univ. of Tokyo、3.Institute of Engineering Innovation, Graduate School of Engineering, The Univ. of Tokyo)

11:15 〜 11:30

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

〇(M1)Vihanga Zoysa¹、 Ryuuichi Itoh¹、 Yutara Takeuchi¹、 Samik DuttaGupta^1,2,3、 Shunsuke Fukami^1,2,3,4,5、 Hideo Ohno^1,2,3,4,5 (1.RIEC, Tohoku Univ.、2.CSIS, Tohoku Univ.、3.CSRN, Tohoku Univ.、4.CIES, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ.)

11:30 〜 11:45

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

〇(M2)Fumiaki Shimohashi¹、 Bao Nguyen¹、 Michihiko Yamanouchi²、 Tetsuya Uemura¹ (1.IST, Hokkaido Univ.、2.RIES, Hokkaido Univ.)

11:45 〜 12:00

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

〇Daichi Sugawara¹、 Shutaro Karube¹、 Makoto Kohda¹、 Junsaku Nitta¹ (1.Tohoku Univ)

12:00 〜 12:15

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

〇Samik Duttagupta^1,2,3、 Aleksandr Kurenkov^1,2,3、 Oleg Tretiakov⁶、 Gunasheel Krishnaswamy⁷、 Giacomo Sala⁷、 Viola Krizakova⁷、 Francesco Maccherozzi⁸、 Sarnjeet Dhesi⁸、 Pietro Gambardella⁷、 Shunsuke Fukami^1,2,3,4,5、 Hideo Ohno^1,2,3,4,5 (1.CSIS, Tohoku Univ.、2.CSRN, Tohoku Univ.、3.RIEC, Tohoku Univ.、4.CIES, Tohoku Univ.、5.WPI-AIMR, Tohoku Univ.、6.School of Physics, UNSW、7.D-MAT, ETH Zurich、8.Diamond Light Source)

12:15 〜 12:30

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

〇Namhai Pham^1,2,3、 Huynh Duy Khang Nguyen¹、 Takanori Shirokura¹ (1.Tokyo Tech、2.Univ. Tokyo、3.JST-CREST)

一般セッション(口頭講演)

[20p-E216-1~7] 【CS.8】 10.1 新物質・新機能創成（作製・評価技術）、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

2019年9月20日(金) 13:30 〜 15:15 E216 (E216)

仕幸英治(大阪市大)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+全てマイスケジュールに登録

13:30 〜 13:45

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

〇Satoshi Haku¹、 Akira Musha¹、 Hiroyasu Nakayama²、 Kazuya Ando¹ (1.Keio Univ.、2.NIMS)

13:45 〜 14:00

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

〇Shutaro Karube^1,2、 Nobuki Tezuka^1,2、 Makoto Kohda^1,2,3、 Junsaku Nitta^1,2,3 (1.Tohoku Univ. Eng.、2.Tohoku Univ. CSRN、3.Tohoku Univ. CSIS)

14:00 〜 14:15

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems

〇Shinji Isogami¹ (1.NIMS)

14:15 〜 14:30

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

〇Aleksandr Kurenkov^1,2,3、 Samik DuttaGupta^1,2,3、 Chaoliang Zhang^1,4,5、 Shunsuke Fukami^1,2,3,5,6、 Yoshihiko Horio¹、 Hideo Ohno^1,2,3,5,6 (1.RIEC, Tohoku University、2.CSIS、3.CSRN、4.FRIS、5.CIES、6.WPI-AIMR)

14:30 〜 14:45

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

〇Ryuhei Kohno^1,2,3,4、 Joao Sampaio^1,2,3,4、 Stanislas Rohart^1,2,3,4、 Andre Thiaville^1,2,3,4 (1.LPS、2.CNRS、3.Univ. Paris-Sud、4.Univ. Paris-Saclay)

14:45 〜 15:00

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

〇(D)Yicheng Guan¹、 Bin Cui¹、 Xilin Zhou¹、 Tianping Ma¹、 Stuart S. P. Parkin¹ (1.Max-planck Society)

15:00 〜 15:15

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

〇(D)Yicheng Guan¹、 Xilin Zhou¹、 Tianping Ma¹、 Stuart S. P. Parkin¹ (1.Max-Planck Society)

セッション一覧

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

認証

セッション一覧

▲ [20a-E216-7] Current induced magnetization switching of W/CoFeB/MgO-based three terminal magnetic tunnel junctions via spin orbit torque

▼ [20a-E216-8] Spin-orbit torque magnetization switching in a perpendicularly magnetized ferromagnetic-semiconductor single layer: Damping like torque and field like torque

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt1-xMnx/CoFeB heterostructures

▼ [20a-E216-10] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa grown on NiAl buffer layer

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO2

▼ [20a-E216-12] Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure

▲ [20a-E216-13] Proposal of an eXtremely simple MRAM (X-MRAM) using magnon emission/absorption and spin-disorder scattering for readout

▲ [20p-E216-1] Surface Rashba-Edelstein Spin-Orbit Torque tuned by organic monolayer

▲ [20p-E216-2] Anomalous spin-orbit field via Rashba-Edelstein effect at W/Pt interface

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe4N, Mn4N)/NM bilayer systems

▲ [20p-E216-4] Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses

▼ [20p-E216-5] Domain wall propagation by spin-orbit torques in in-plane magnetized systems

▼ [20p-E216-6] Tailoring domain-wall motion and magnetization in synthetic antiferromagnets through ionic liquid gating

▲ [20p-E216-7] Racetrack memory by design: enhanced current induced domain wall motion through interfacial engineering

認証

▼ [20a-E216-9] Composition dependence of spin-orbit torque in Pt_1-xMn_x/CoFeB heterostructures

▼ [20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO₂

▲ [20p-E216-3] Dependence of spin orbit torque effective fields on temperature in (Fe₄N, Mn₄N)/NM bilayer systems