Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

Nguyen ThiKhanh Hoa; Yuri Mizukawa; Hiroaki Hanafusa; Seichiiro Higashi

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.2 プラズマ成膜・エッチング・表面処理

[18p-C309-1~13] 8.2 プラズマ成膜・エッチング・表面処理

2019年9月18日(水) 13:45 〜 17:15 C309 (C309)

荻野明久(静大)、布村正太(産総研)

15:00 〜 15:15

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

〇(D)Nguyen ThiKhanh Hoa¹、Yuri Mizukawa¹、Hiroaki Hanafusa¹、Seichiiro Higashi¹ (1.Hiroshima Univ.)

キーワード：micro-thermal plasma jet, transient reflectivity, amorphous silicon

High-speed camera (HSC) and He-Ne laser (632.8nm in wavelength) as a temperature probe for direct observation of phase transformation during µ-TPJ annealing were introduced in this research. The phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation were observed directly.