[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

[9a-M121-1] Transient photo-assisted capacitance characterization of deep states at insulator/wide-bandgap semiconductor interface

〇Atsushi Hiraiwa^1,2, Satoshi Okubo³, Kiyotaka Horikawa³, Hiroshi Kawarada^1,2,3,4 (1.RONLI, Waseda Univ., 2.IMaSS, Nagoya Univ., 3.FSE, Waseda Univ., 4.KMLMST, Waseda Univ.)

Keywords:wide-bandgap semiconductor, interface state, photo-assisted capacitance

To analyze deep traps at gate insulator/wide-bandgap semiconductor interface, we have previously reported a new photo-assisted capacitance–voltage (C–V) method. To further improve the analysis accuracy, this study proposes a method that investigates transient capacitance under UV illumination. The analysis by this method revealed the presence of linearly time-varying component. After removing the contribution from this component and compensating for inevitable electron detrapping from interface states, the results by this method and by the previous photo-assisted C–V method approximately agreed with each other, verifying the validity of both the methods.