MBE growth of GaNAsBi/GaAs multiple quantum well structures

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

2:00 PM - 2:15 PM

〇Sho Hasegawa¹, Hiromu Kawata¹, Ryuya Aoki¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:semiconductor, MQW, MBE