Oral presentation

[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

Wed. Sep 21, 2022 9:00 AM - 11:45 AM C301 (C301)

Takuro Fujii(NTT), Takeshi Fujisawa(Hokkaido University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-C301-1] Low Threshold Current 1.55 um-Band Quantum Dot Laser with InP(311)B Substrate

〇Atsushi Matsumoto¹, Kouichi Akahane¹, Shinya Nakajima¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Atsushi Kanno¹ (1.NICT)

9:15 AM - 9:30 AM

[21a-C301-2] 1.3 μm-Wavelength Lasers with Type-II GaInAs/GaAsSb/GaInAs “W”-Quantum Wells on GaAs Sub.

〇Takuma Fuyuki¹, Takashi Go¹, Daisuke Inoue¹, Hiroyuki Yoshinaga¹, Mitsuru Ekawa¹, Takashi Ishizuka¹, Susumu Yoshimoto¹, Peter Ludewig², Ada Baumner², Antje Ruiz Perez², Wolfgang Stolz² (1.Transmission Devices Lab., Sumitomo Electric Industries, Ltd., 2.NAsP III/V GmbH)

9:30 AM - 9:45 AM

[21a-C301-3] Well layer thickness dependence on threshold current of SCH-MQW laser diode on InP/Si substrate.

〇Ryosuke Yada¹, Kouji Agata¹, Shingo Ito¹, Liang Zhao¹, Sae Aoki¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:45 AM - 10:00 AM

[21a-C301-4] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate

〇(M2)Liang Zhao¹, Koji Agata¹, Shingo Ito¹, Ryosuke Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

10:00 AM - 10:15 AM

[21a-C301-5] Wide wavelength emission in mid-infrared region from InAs/GaSb superlattice grown by MOVPE method.

〇Yuto Iwakiri¹, Masakazu Arai¹, Fujisawa Takeshi², Koji Maeda¹ (1.Miyazaki Univ., 2.Hokkaido Univ.)

10:30 AM - 10:45 AM

[21a-C301-6] Deep etching of grating for DFB and DBR lasers

〇(M2)Ryumi Katsuhara¹, Ryouta Yabuki¹, Siim Heinsalu¹, Zhiping Ge¹, Atsushi Matsumoto², Kuichi Akahane², Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Wasada Univ., 2.NICT)

10:45 AM - 11:00 AM

▲ [21a-C301-7] 1060nm Single-mode Bottom Emitting VCSEL Array for Multi-core Fiber Co-packaged Optics Transceivers

〇(DC)Liang Dong¹, Xiaodong Gu¹, Fumio Koyama¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

▲ [21a-C301-8] Characteristic Analysis of Isolation of Lateral-Electric-Field Electro-Absorption Modulator in GaAs by Proton Bombardment

〇(M2)Pengjun Yu¹, Kairi Atsugi¹, Jinkwan Kwoen², Yuichi MATSUSHIMA¹, kou Ishikawa¹, Yasuhiko Arakawa², Katsuyuki Utaka¹ (1.Waseda Univ, 2.Univ. of Tokyo)

11:15 AM - 11:30 AM

[21a-C301-9] Evaluation of the relationship between coupling length and oscillation characteristics
in InP-based microring lasers

〇Kenta Tsunashima¹, Canon Kawarai¹, Hiromasa Shimizu¹ (1.Tokyo Univ. of Agri. and Tech.)

11:30 AM - 11:45 AM

[21a-C301-10] Effect of deformation on statistical distribution of resonance frequencies in a chaotic cavity

〇Takehiro Fukushima¹ (1.Okayama Pref. Univ.)

Oral presentation

[21p-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

Wed. Sep 21, 2022 1:30 PM - 4:15 PM C301 (C301)

Masakazu Arai(Univ. of Miyazaki), Kazuhiko Shimomura(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[21p-C301-1] Evaluation of Transition Energy of InAs/GaSb Superlattice by Using PL and PR Method

〇Tatsuhiko Yatabe¹, Riku Sakoda¹, Masakazu Arai¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Miyazaki Univ.)

1:45 PM - 2:00 PM

△ [21p-C301-2] Photodetection of Ge Schottky photodiodes through short-wave infrared transparent conductive oxide electrodes

〇(DC)Hiroto Ishii^1,2, Wen Hsin Chang², Hiroyuki Ishii², Takashi Koida², Hiroki Fujishiro¹, Tatsuro Maeda^1,2 (1.TUS, 2.AIST)

2:00 PM - 2:15 PM

[21p-C301-3] Incident Polarization Dependence in Spectroscopic Light Sensitivity of SOI Photodiode with Rectangular Lattice Metal Hole Array

〇Ryuji Yamamoto¹, Hiroaki Satoh^1,2, Ryo Takane¹, Hiroshi Inokawa^1,2 (1.GSIST, Shizuoka Univ., 2.RIE, Shizuoka Univ.)

2:15 PM - 2:30 PM

▲ [21p-C301-4] Valley-selective excitations in TMD monolayer by ω+2ω pulses

〇(PC)Arqum Hashmi¹, Shunsuke Yamada¹, Kazuhiro Yabana², Tomohito Otobe¹ (1.Kansai Photon Science Institute, National Institutes for Quantum Science and Technology (QST), Kizugawa, Kyoto 619-0215, Japan, 2.Center for Computational Sciences, University of Tsukuba, Tsukuba 305-8577, Japan)

2:30 PM - 2:45 PM

▲ [21p-C301-5] Design of LED based optical wireless power transmission system for increased transmission distance

〇(M2)Mingzhi Zhao¹, Tomoyuki Miyamoto¹ (1.Tokyo Institute of Technology)

3:00 PM - 3:15 PM

[21p-C301-6] Laser irradiation area dependence of conversion efficiency of CIGS solar cells for optical wireless power transmission

〇(M1)Shunsuke Shibui¹, Masahiro Koga¹, Taiki Maeda¹, Hironori Komaki², Hiroshi Tomita², Motoshi Nakamura², Shiro Uchida¹ (1.Chiba Inst., 2.Idemitsu Kosan Co., Ltd.)

3:15 PM - 3:30 PM

[21p-C301-7] Hydrogen generation of 3-junction III-V solar cells with electroplated platinum black

〇(M1)Harufumi Takada¹, Ryoutaro Fujita¹, Taiga Shibuya¹, Keisuke Ota¹, Shiro Uchida¹ (1.CIT)

3:30 PM - 3:45 PM

[21p-C301-8] Effects of deposited high optical density semiconductor nanoparticle films on Si Solar cells

〇Keigo Awai¹, Yuki Idutu², Jianbo Liang^1,2, Hisaaki Nishimura¹, DaeGwi Kim^1,2, YongGu Shim², Naoteru Shigekawa^1,2 (1.Osaka City Univ., 2.Osaka Metropolitan Univ.)

3:45 PM - 4:00 PM

[21p-C301-9] Evaluation of InGaAsP photovoltaic device with circular outer electrode

〇Masakazu Arai¹, Akira Kushiyama¹, Yuga Motomura¹, Kensuke Nishioka¹ (1.Univ. of Miyazaki)

4:00 PM - 4:15 PM

[21p-C301-10] Water splitting reaction using GaInP/InGaAs/Ge 3-junction concentrator solar cell

〇Ryotaro Fujita¹, Harufumi Takada¹, Taiga Shibuya¹, Yukito Masuoka¹, Shiro Uchida¹ (1.Chiba Inst.)

Poster presentation

[22p-P05-1~3] 3.12 Semiconductor optical devices (formerly 3.13)

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P05 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[22p-P05-1] Analysis of 1.6 µm wavelength quantum cascade lasers using Si/CaF₂ heterostructures

〇Gensai Tei¹, Long Liu¹, Masataka Saito¹, Koyo Matsuura¹, Yuta Sugiyama¹, Masahiro Watanabe¹ (1.Tokyo Tech)

1:30 PM - 3:30 PM

[22p-P05-2] Realization of high sensitivity imaging in charge multiplication film bonded imaging device using single crystal gallium oxide substrate as hole injection blocking layer

〇Keitada Mineo¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Satoshi Aihara¹, Mutsumi Sugiyama², Masakazu Nanba¹ (1.NHK STRL, 2.Tokyo Univ. Sci.)

1:30 PM - 3:30 PM

[22p-P05-3] Photosensitivity of Mg2Si-PD with SiO2 film

〇Naoki Imaizumi¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Sessions

3 Optics and Photonics » 3.12 Semiconductor optical devices (formerly 3.13)

[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

[21a-C301-1] Low Threshold Current 1.55 um-Band Quantum Dot Laser with InP(311)B Substrate

[21a-C301-2] 1.3 μm-Wavelength Lasers with Type-II GaInAs/GaAsSb/GaInAs “W”-Quantum Wells on GaAs Sub.

[21a-C301-3] Well layer thickness dependence on threshold current of SCH-MQW laser diode on InP/Si substrate.

[21a-C301-4] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate

[21a-C301-5] Wide wavelength emission in mid-infrared region from InAs/GaSb superlattice grown by MOVPE method.

[21a-C301-6] Deep etching of grating for DFB and DBR lasers

▲ [21a-C301-7] 1060nm Single-mode Bottom Emitting VCSEL Array for Multi-core Fiber Co-packaged Optics Transceivers

▲ [21a-C301-8] Characteristic Analysis of Isolation of Lateral-Electric-Field Electro-Absorption Modulator in GaAs by Proton Bombardment

[21a-C301-9] Evaluation of the relationship between coupling length and oscillation characteristics
in InP-based microring lasers

[21a-C301-10] Effect of deformation on statistical distribution of resonance frequencies in a chaotic cavity

[21p-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

[21p-C301-1] Evaluation of Transition Energy of InAs/GaSb Superlattice by Using PL and PR Method

△ [21p-C301-2] Photodetection of Ge Schottky photodiodes through short-wave infrared transparent conductive oxide electrodes

[21p-C301-3] Incident Polarization Dependence in Spectroscopic Light Sensitivity of SOI Photodiode with Rectangular Lattice Metal Hole Array

▲ [21p-C301-4] Valley-selective excitations in TMD monolayer by ω+2ω pulses

▲ [21p-C301-5] Design of LED based optical wireless power transmission system for increased transmission distance

[21p-C301-6] Laser irradiation area dependence of conversion efficiency of CIGS solar cells for optical wireless power transmission

[21p-C301-7] Hydrogen generation of 3-junction III-V solar cells with electroplated platinum black

[21p-C301-8] Effects of deposited high optical density semiconductor nanoparticle films on Si Solar cells

[21p-C301-9] Evaluation of InGaAsP photovoltaic device with circular outer electrode

[21p-C301-10] Water splitting reaction using GaInP/InGaAs/Ge 3-junction concentrator solar cell

[22p-P05-1~3] 3.12 Semiconductor optical devices (formerly 3.13)

[22p-P05-1] Analysis of 1.6 µm wavelength quantum cascade lasers using Si/CaF₂ heterostructures

[22p-P05-2] Realization of high sensitivity imaging in charge multiplication film bonded imaging device using single crystal gallium oxide substrate as hole injection blocking layer

[22p-P05-3] Photosensitivity of Mg2Si-PD with SiO2 film

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