2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-7] Advanced CMOS: Device Technology

2022年9月29日(木) 09:00 〜 10:15 301 (3F)

Session Chair: Keisuke Yamamoto (Kyushu Univ.), Anabela Veloso (imec)

10:00 〜 10:15

[G-7-04] Mobile-Ionic FETs Based on Amorphous Dielectric with Steep Subthreshold Swing

〇Huan Liu1, Lulu Chou2, Chengji Jin1, Jiajia Chen1, Xiao Yu1, Yan Liu2, Genquan Han2 (1. Zhejiang Lab (China), 2. Xidian University (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-7-04

Thanks to the surface potential amplification effect induced by ions movement in the dielectric, the steep subthreshold swing (SS) of 25 and 19 mV/decade over 2 decades has been realized at forward and reverse sweep-ing, respectively, in mobile-ionic FETs (MIFET) with 3.5 nm amorphous (a-) ZrO2. The negative differential re-sistance (NDR) phenomenon can be observed in devices. MIFET exhibits a stable ferroelectric-type hysteresis at the wide temperature range from room temperature to 77K, with temperature-independent SS, indicating the possible low power utilization in cryogenic.

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