[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

^○K. Horikawa¹, A. Hiraiwa^2,3,4, S. Okubo¹, T. Kageura¹, H. Kawarada^1,2,3 (1.Waseda Univ. (Japan), 2.RONL, Waseda Univ. (Japan), 3.KMRIMST, Waseda Univ. (Japan), 4.IMaSS, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-16] Warpage Reduction of Thick 4H-SiC Epitaxial Layers on the Substrates

^○K. Masumoto¹, S. Segawa^1,2, T. Ohno³, S. Tsukimoto^1,4, K. Kojima¹, T. Kato¹, H. Okumura¹ (1.AIST (Japan), 2.Asahi Diamond Indus. Corp., Ltd. (Japan), 3.Hitachi, Ltd. (Japan), 4.JFE Techno-Research Co. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-17] Estimation of Border Trap Distribution in Electron Irradiated SiC MOS Capacitor Using High Temperature 1M Hz C-V Method

Z. Peng^1,2,^○J. Hao^1,2, S. Wang^1,2,3, Y. Bai^1,2, Y. Tang^2,1, X. Liu^1,2 (1.Institute of Microelectronics of Chinese Academy of Sciences (China), 2.Universty of Chinese Academy of Sciences (China), 3.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences (China))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-18] Impact of Oxygen Radical Treatment on Improvement of Al₂O₃/SiC Interface

^○T. Doi^1,2, W. Takeuchi^1,3, M. Sakashita¹, N. Taoka², O. Nakatsuka^1,4, S. Zaima⁵ (1.Grad. Sch. of Eng., Nagoya Univ. (Japan), 2.AIST-NU GaN-OIL (Japan), 3.Aichi Inst. of Tech. (Japan), 4.IMaSS, Nagoya Univ. (Japan), 5.Inst. of innovation for Future Society, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-19 (Late News)] Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs

^○D.S. Chao¹, H.Y. Shih², J.Y. Jiang², C.F. Huang², C.Y. Chiang³, C.S. Ku³, K.Y. Lee⁴ (1.Nuclear Sci. and Tech. Development Center, National Tsing Hua Univ. (Taiwan), 2.Inst. of Electronics Eng., National Tsing Hua Univ. (Taiwan), 3.National Synchrotron Radiation Res. Center (Taiwan), 4.Department of Eng. Sci. and Ocean Eng., National Taiwan Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-20 (Late News)] First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

^○T. Nagura¹, K. Chokawa¹, M. Araidai^1,2, T. Hosoi³, H. Watanabe³, A. Oshiyama², K. Shiraishi^1,2 (1.Graduate School of Engineering, Nagoya Univ. (Japan), 2.Institute of Materials and Systems for Sustainability, Nagoya Univ. (Japan), 3.Graduate School of Engineering, Osaka Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-21 (Late News)] InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics

^○H.Q. Luc¹, Y.K. Zhang¹, D.Y. Jin¹, H.S. Huynh¹, H.M.T. Ha¹, B.H. Do¹, P. Huang¹, W.C. Hsu¹, C.Y. Lin¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-22] Characteristic Analysis of Normally-off Al₂O₃/H-diamond MOSFET with 40-μm Gate Length

J. Zhang¹, W. Chen¹, ^○Z. Ren¹, J. Zhang¹, Y. Hao¹ (1.Xidian Univ. (China))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-23 (Late News)] Process Damage Influence for Electrical Property of Diamond Schottky Barrier Diodes

^○T. Murooka¹, K. Takizawa², Y. Kato³, T. Makino³, M. Ogura³, H. Kato³, R. Wada², S. Yamasaki³, T. Iwasaki¹, H. Nohira², M. Hatano¹ (1.Tokyo Tech (Japan), 2.Tokyo City Univ. (Japan), 3.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード

[PS-4-24] Proposal of Novel Terahertz Oscillators Using Resonant Tunneling Diodes and Cavity Resonators

^○H. Tanaka¹, Y. Aoyama¹, R. Izumi¹, S. Suzuki¹, M. Asada¹ (1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 11:00 〜 13:30 |PDF ダウンロード