2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (151 - 160)

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[D-7-03] Damage mechanism of GaN/DBA die-attach module with Ag sinter paste by thermal shock

^○D. Kim¹, C. Chen¹, C. Pei², Z. Zhang¹, S. Nagao¹, A. Suetake¹, T. Sugahara¹, K. Suganuma¹ (1.ISIR, Osaka univ. (Japan), 2.Academy of Electronics and Info.,Tech. (China))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 9:45 AM - 10:00 AM |PDF Download

[D-7-04] A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Devices

^○A. Zhang¹, Q. Zhou¹, C. Yang¹, Y. Shi¹, W. Chen¹, Z. Li¹, B. Zhang¹ (1.Univ. of Electronic Sci. and Tech. of China (China))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 10:00 AM - 10:15 AM |PDF Download

[D-7-05] 100V to 1800V High Performance p-GaN HEMT Epitaxial Layers and E-mode Power Devices on 8-inch Commercial QST^® Substrates

^○C. Basceri¹, V. Odnoblyudov¹, O. Aktas¹, S. Farrens¹ (1.Qromis, Inc. (USA))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 10:15 AM - 10:30 AM |PDF Download

[D-7-06] Investigation of the Si₃N₄/(Al)GaN interface properties in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMT with Post Deposition Annealing

^○H. Sun¹, M. Wang¹, J. Chen², D. Chen¹ (1.Peking University (China), 2.Founder Microelectronics International Co., Ltd. (China))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 10:30 AM - 10:45 AM |PDF Download

[D-8-01] A Superior 15-kV SiC MOSFET with Current Spreading Layer for High-Frequency Applications

^○H. Kitai¹, T. Yamaguchi¹, Y. Hozumi¹, H. Shiomi¹, K. Fukuda¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:00 PM - 2:15 PM |PDF Download

[D-8-02] Double RESURF JTEs Structure for Low On-Resistance Trench Gate SiC MOSFET

^○Y. Saitoh¹, T. Masuda¹, H. Michikoshi¹, H. Shiomi¹, S. Harada¹, Y. Mikamura² (1.AIST (Japan), 2.Sumitomo Electric Industries, Ltd. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:15 PM - 2:30 PM |PDF Download

[D-8-03] Low-temperature, high-concentration laser doping of nitrogen to 4H-SiC for low-contact-resistance fabrication

^○T. Kikuchi^1,2, K. Imokawa^1,2, A. Ikeda³, D. Nakamura¹, T. Asano¹, H. Ikenoue^1,2 (1.Grad. Sch. of ISEE, Kyushu Univ. (Japan), 2.Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan), 3.Dept. of Computer and Info. Sci., Sojo Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:30 PM - 2:45 PM |PDF Download

[D-8-04] Investigation of grinding or mechanical polishing surface of 4H-SiC substrate

^○R. Hiraide¹, T. Okamoto², M. Haraguchi² (1.Kemet Japan CO.,LTD. (Japan), 2.FRC, Tokushima Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 2:45 PM - 3:00 PM |PDF Download

[D-8-05] Stress at Interface of SiO2/4H-SiC Studied by Confocal Raman Microscopy

^○W. Fu¹, A. Kobayashi¹, H. Yano¹, S. Harada², T. Sakurai¹ (1.Univ. of Tsukuba (Japan), 2.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 3:00 PM - 3:15 PM |PDF Download

[D-8-06] Impact of Al₂O₃ interlayer for metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC for electronic device application

^○K. Yamamoto¹, D. Wang¹, H. Nakashima¹, S. Hishiki², K. Kawamura^2,1 (1.Kyushu University (Japan), 2.Air Water Inc. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 3:15 PM - 3:30 PM |PDF Download

922 results (151 - 160)

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