[F-2-02 (Invited)] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities
2019 International Conference on Solid State Devices and Materials
|2019年9月3日(火)
779件中(141 - 150)
[F-2-03] Fabrication of GaN high-aspect fine nano-hole array structures by hydrogen atmosphere anisotropic thermal etching with ammonia gas
2019 International Conference on Solid State Devices and Materials
|2019年9月3日(火)
[F-2-04] MBE Self-Assembled Growth of InGaN Nanorods on Patterned Sapphire Substrate with Enhanced Photoluminescence Performance
2019 International Conference on Solid State Devices and Materials
|2019年9月3日(火)
[F-2-05] Experimental Studies and Model Analysis on Potential Fluctuation in InGaN Quantum-Well Layers
2019 International Conference on Solid State Devices and Materials
|2019年9月3日(火)
[F-4-01 (Invited)] 2D Oxide and Hydroxide Nanosheets: Synthesis, Layer-by-Layer Assembly and Function Design
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[F-4-02] Synthesis of Ge-based Nanosheet Bundles Using Calcium Germanides as Templates in IP6 Aqueous Solution
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[F-4-03] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[F-5-01] Ab initio Study for Adsorption and Desorption Behavior at Step Edges of AlN(0001) and GaN(0001) Surfaces
2019 International Conference on Solid State Devices and Materials
|2019年9月5日(木)
[F-5-02] Gallium Diffusion and Ammonia Decomposition on Growing GaN Surface: First Principles Molecular Dynamics Simulations
2019 International Conference on Solid State Devices and Materials
|2019年9月5日(木)
[F-5-03] Novel approach for Growth Mechanism of Atomic Layer Epitaxy of GaAs and AlAs
2019 International Conference on Solid State Devices and Materials
|2019年9月5日(木)