2019 International Conference on Solid State Devices and Materials

Sep 2, 2019 - Sep 5, 2019
Nagoya University

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779 results (291 - 300)

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[N-2-01] Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs

^○S.E. Tyaginov^1,2,3, A.V. Chasin¹, A. Makarov², A.-M. El-Sayed², M. Jech², A. De Keersgieter¹, G. Eneman¹, M. Vandemaele¹, J. Franco¹, D. Linten¹, B. Kaczer¹ (1.Imec (Belgium), 2.Tech. Univ. Vienna (Austria), 3.A.F. Ioffe Phys.-Tech. Inst. (Russia))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 3:45 PM - 4:00 PM |PDF Download

[N-2-02] Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si_1-xGe_xEpitaxial Layers

^○L. Dagault^1,2, S. Kerdilès¹, P. Acosta-Alba¹, J.-M. Hartmann¹, J.-P. Barnes¹, P. Gergaud¹, F. Cristiano² (1.CEA-LETI, Univ. Grenoble Alpes (France), 2.LAAS-CNRS, Univ. Toulouse (France))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:00 PM - 4:15 PM |PDF Download

[N-2-03] Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations

^○W. Chang¹, T. Irisawa¹, W. Mizubayashi¹, H. Ishii¹, N. Uchida¹, T. Maeda¹ (1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:15 PM - 4:30 PM |PDF Download

[N-2-04] 3D-stacked Highly Strained SiGe/Ge Gate-All-Around (GAA) pFETs Fabricated by 3D Ge Condensation

^○J. Suh¹, A.C. Meng¹, T.R. Kim¹, A.F. Marshall¹, A. Pakzad², P.C. McIntyre¹, K.C. Saraswat¹ (1.Stanford Univ. (USA), 2.Gatan Inc. (USA))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:30 PM - 4:45 PM |PDF Download

[N-2-05] Electrical Properties of p-Channel Thin-Film Transistors Fabricated on High-Mobility Polycrystalline Ge on Glass

^○K. Moto^1,2, K. Yamamoto³, T. Suemasu¹, H. Nakashima⁴, K. Toko¹ (1.Univ. of Tsukuba (Japan), 2.JSPS Res. Fellow (Japan), 3.IGSES, Kyushu Univ. (Japan), 4.GIC, Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:45 PM - 5:00 PM |PDF Download

[N-2-06] Experimental demonstration of n- and p-channel GaN MOSFETs operation for power IC

^○N.H. Trung¹, N. Taoka², H. Yamada¹, T. Takahashi¹, T. Yamada¹, M. Shimizu¹ (1.AIST-NU GaN-OIL (Japan), 2.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:00 PM - 5:15 PM |PDF Download

[N-2-07 (Late News)] Implementation of FeFET Memory Device Utilizing Highly Reliable Ferroelectric Hf_0.5Zr_0.5O₂ Film with Embedded Al Nanoclusters

^○T. Ohara¹, T. Yamaguchi¹, T. Hayashi¹, K. Maekawa¹, M. Inoue¹, H. Yanagita¹, M. Matsuura¹, T. Yamashita¹ (1.Renesas Electronics Corp., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:15 PM - 5:30 PM |PDF Download

[N-3-01 (Invited)] Studies of Ferroelectric HfO2 Materials before Memory and Logic Applications

^○S. Migita¹ (1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:00 AM - 9:30 AM |PDF Download

[N-3-02] Impact of Non-Linear Subthreshold I-V on the Scalability of Ultra-Thin-Body Negative-Capacitance FETs and Its Mitigation

^○S.E. Huang¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:30 AM - 9:45 AM |PDF Download

[N-3-03] Performance improvement in ZnSnO/Si bilayer TFET by W/Al₂O₃ gate stack

^○K. Kato^1,2, H. Matsui², H. Tabata², T. Mori¹, Y. Morita¹, T. Matsukawa¹, M. Takenaka², S. Takagi² (1.AIST (Japan), 2.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:45 AM - 10:00 AM |PDF Download

779 results (291 - 300)

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