[D-2-01 (Invited)] Scalable Nanomanufacturing Processes for High Performance Transistor Inks

M. Mujica¹, A.T. Mohabir¹, G. Tutuncuoglu¹, V. Breedveld¹, S.H. Behrens¹, E.M. Vogel¹,^○M.A. Filler¹ (1.Georgia Inst. of Tech. (USA))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 3:45 PM - 4:15 PM |PDF Download

[D-2-02 (Invited)] Semiconductor InSb Nanolayers: A New Platform for Developments of Quantum and Topological Devices

^○H. Xu^1,2 (1.Peking Univ. (China), 2.Beijing Academy of Quantum Information Sciences (China))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:15 PM - 4:45 PM |PDF Download

[D-2-03] Growth and properties of InGaN based nanorods for LEDs : comparison between core/shell and axial MQWs structures

^○G. Avit¹, Y. Robin¹, Y. Liao¹, L. Mostéfa², B. Michalska², A. Trassoudaine³, S. Nitta¹, H. Amano¹ (1.Nagoya Univ. (Japan), 2.IUT Mesures Physique, Univ. Clermont Auvergne, (France), 3.Univ. Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal (France))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 4:45 PM - 5:00 PM |PDF Download

[D-2-04] GaAs/AlGaAs Core-Multishell Structure Covered by Native oxide AlGaOx

^○R. Tsutsumi¹, N. Tsuda¹, F. Ishikawa¹ (1.Ehime Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Tue. Sep 3, 2019 5:00 PM - 5:15 PM |PDF Download

[D-3-01 (Invited)] Dynamical Studies of Hot Carriers in 2D Semiconductors:Intrinsic vs. Extrinsic Processes

J. Nathawat¹, H. Ramamoorthy², R. Somphonsane², K. Sakanashi³, N. Aoki³,^○J.P. Bird¹ (1.Univ. at Buffalo (USA), 2.King Mongkut's Institute of Technology Ladkrabang (Thailand), 3.Chiba Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:00 AM - 9:30 AM |PDF Download

[D-3-02] State-Space Modeling for Graphene FET Biosensor Dynamic Response

^○S. Ushiba¹, T. Okino¹, T. Ono², N. Miyakawa¹, A. Shinagawa¹, K. Yamamoto², Y. Kanai², K. Inoue², K. Takahashi¹, M. Kimura¹, K. Matsumoto² (1.Murata Manufac. Co., Ltd. (Japan), 2.Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:30 AM - 9:45 AM |PDF Download

[D-3-03] Heavy-Metal-Ion Sensor Using Graphene Field-Effect Transistor Decorated with Thiacalix[4]arene

^○Y. Takagiri¹, T. Ikuta¹, K. Maehashi¹ (1.Tokyo Univ. of Agri. and Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 9:45 AM - 10:00 AM |PDF Download

[D-3-04] Quantum Hall Effect and Band Dispersion in Artificially Stacked CVD Graphene

^○H. Murano¹, K. Ikushima¹, T. Ikuta¹, K. Maehashi¹ (1.Tokyo Univ. of A & T (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:00 AM - 10:15 AM |PDF Download

[D-3-05] FABRICATION OF TENSILE STRAIN APPLYING STRUCTURE TO SUSPENDED GRAPHENE FOR NANOMECHANICAL RESONATOR WITH HIGH FQ PRODUCT

^○J. Uesaka¹, K. Go¹, S. Kidane¹, K. Sawada¹, K. Takahashi¹ (1.Toyohashi Univ. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 10:15 AM - 10:30 AM |PDF Download

[D-4-01 (Invited)] Artificial Synapses based on 2D Materials for Neuromorphic Computing

Lin Wang^1,2, Yong-Wei Zhang³, Dongzhi Chi⁴,^○Kah-Wee Ang^1,2 (1.National Univ. of Singapore (Singapore), 2.Centre for Advanced 2D Materials, National Univ. of Singapore (Singapore), 3.Institute of High Performance Computing, A*STAR (Singapore), 4.Institute of Materials Research and Engineering, A*STAR (Singapore))

2019 International Conference on Solid State Devices and Materials |Wed. Sep 4, 2019 3:30 PM - 4:00 PM |PDF Download