[2A516-19] EUV Lithography V

[2A518] EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing [Invited]

*Cong Que DINH¹, Seiji Nagahara², Yuhei Kuwahara¹, Arnaud Dauendorffer¹, Keisuke Yoshida¹, Makoto Muramatsu¹, Shinichiro Kawakami¹, Satoru Shimura¹, Kosuke Yoshihara¹, John S. Petersen³, Danilo De Simone³, Philippe Foubert³, Geert Vandenberghe³, Lior Hui⁴, Steven Grzeskowiak⁴, Alexandra Krawicz⁴, Nayoung Bae⁴, Kanzo Kato⁴, Kathleen Nafus⁵, Angélique Raley⁵ (1. Tokyo Electron Kyushu, 2. Tokyo Electron Ltd., 3. imec, 4. TEL Technology Ctr., America, 5. Tokyo Electron America, Inc.)