[2A09-10] インターナショナル sess.(7)

[2A09] [Invited] Computational studies on atomic layer deposition mechanisms of Al₂O₃

○Kim Ki-Chul¹ (1. Konkuk University)

Despite the importance of the atomic layer deposition (ALD) technique for developing thin films of various inorganic materials with the precisely controlled thickness, the detailed mechanistic pathway and thermodynamics of the ALD processes are not fully understood. In this study, the first principles density functional theory calculations for ALD of Al₂O₃ are employed to explore the reaction thermodynamics and kinetics in the chemical adsorption of precursors during the cycles.

キーワード：Computational study, atomic layer deposition mechanisms, Al2O3