Oral presentation

Joint session K » Joint session K

[17p-B4-1~18] Joint session K

Tue. Sep 17, 2013 1:30 PM - 6:15 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch (12:15 PM - 1:30 PM)

1:30 PM - 1:45 PM

[17p-B4-1] Evaluation of Initial Growth Process for V-doped ZnO Thin Films

^○Tatsuya Mori¹, Hiroshi Chiba¹, Shuhei Okuda¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ. Graduate school of engineering¹)

1:45 PM - 2:00 PM

[17p-B4-2] Thermal Stability of Annealing V-Doped ZnO Tin Films

^○Hiroshi Chiba¹, Tatsuya Mori¹, Shuhei Okuda¹, Kenta Terui², Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹, Tohoku Univ.²)

2:00 PM - 2:15 PM

[17p-B4-3] Evaluation of Structural Change of V-doped ZnO Thin Films through Thermal Annealing by Using Raman Spectroscopy

^○Shuhei Okuda¹, Hiroshi Chiba¹, Tatsuya Mori¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

2:15 PM - 2:30 PM

▲ [17p-B4-4] O2/Ni ratio dependence of structure and surface morphology in atmospheric pressure MOCVD grown NiO thin films

^○(M2)Teuku Muhammad Roffi¹, Kazuo Uchida¹, Shinji Nozaki¹ (Univ. of Electro-Communications¹)

2:30 PM - 2:45 PM

▲ [17p-B4-5] A Heterojunction Diode p-NiO/n-Si Formed by UV Oxidation of Ni on n-Si

^○(DC)Dongyuan Zhang¹, Kazuo Uchida¹, Shinji Nozaki¹ (Univ. of Electro-Communication¹)

2:45 PM - 3:00 PM

△ [17p-B4-6] Transparent conducting Ta:SnO₂ films sputtered on TiO₂-NbO₂ solid solution seed layers (Ⅱ)

^○Yuki Hattori¹, Syouitirou Nakao^2,3, Yosihiko Ninomiya¹, Atsushi Sato¹, Tetsuya Hasegawa^2,3, Naoomi Yamada¹ (Chubu Univ.¹, KAST², Univ. Tokyo³)

3:00 PM - 3:15 PM

[17p-B4-7] Effects of RF-superimposed DC magnetron sputtering on the properties of highly transparent conductive Al-doped ZnO films

^○Junichi Nomoto¹, Huaping Song¹, Hisao Makino¹, Seiichi Kishimoto^1,2, Tetsuya Yamamoto¹ (Research Inst. Kochi Univ. Tech¹, Kochi National College of Tech.²)

3:15 PM - 3:30 PM

[17p-B4-8] Contribution of hydrogen donors to conductive properties of ZnO and GZO films

^○Housei Akazawa¹ (NTT MI Labs.¹)

3:30 PM - 3:45 PM

△ [17p-B4-9] Point Defects in IGZO Thin Films Fabricated by a Screen Printing Method

^○Takaaki Morimoto¹, Ken-ichi Nomura², Nobuko Fukuda², Yoshimichi Ohki¹ (Waseda Univ.¹, FLEC, AIST²)

Break (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[17p-B4-10] [Young Scientist Oral Presentation Award Speech](15 min.) Effect of fluorine contents in gate insulators on a-InGaZnO thin film transistors

^○Haruka Yamazaki¹, Yasuaki Ishikawa¹, Yoshihiro Ueoka¹, Satoshi Urakawa¹, Masaki Fujiwara², Eiji Takahashi², Yasunori Andoh², Yukiharu Uraoka¹ (NAIST¹, Nissin electric²)

4:15 PM - 4:30 PM

[17p-B4-11] Fabrication of Thin Film Transistors of oxide semiconductor by using Microwave sintering

^○Hea Jeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Masayuki Haranaka¹, Kazuhiko Takeuchi¹, Ritsuko Nagahata¹, Sei Uemura¹, Nobuko Fukuda¹ (National Institute of Advanced Industrial Science and Technology (AIST)¹)

4:30 PM - 4:45 PM

[17p-B4-12] Evaluation of Electronic States in In-Ga-Zn-O thin films by Photoinduced Transient Spectroscopy (PITS)

^○Hiroaki Tao¹, Yasuyuki Takanashi¹, Shinya Morita¹, Aya Hino¹, Hiroshi Goto¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

4:45 PM - 5:00 PM

△ [17p-B4-13] Effect of Low Temperature Hydrogen Annealing in Amorphous-InGaZnO TFT

^○Yoshihiro Ueoka¹, Yasuaki Ishikawa¹, Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Yukihiro Osada¹, Masahiro Horita¹, Yukiharu Uraoka¹ (Nara Inst. of Sci. and Tech.¹)

5:00 PM - 5:15 PM

[17p-B4-14] Dependency of process condition in IGZO TFT Reliability

^○Ju Saka¹, Lijin Shou¹, Fumito Otake¹, Akira Taki¹, Masanori Shirai¹, Tomiyuki Yukawa¹, Masaki Takei¹, Junya Kiyota¹, Satoru Ishibashi¹, Kazuya Saito¹ (ULVAC Inc,¹)

5:15 PM - 5:30 PM

[17p-B4-15] Scale Dependence of Heating and Degradation Phenomena for Oxide Thin-Film Transistor

^○Satoshi Urakawa¹, Shigekazu Tomai², Masashi Kasami², Koki Yano², Wang Dapeng³, Mamoru Furuta³, Masahiro Horita^1,4, Yasuaki Ishikawa^1,4, Yukiharu Uraoka^1,4 (NAIST¹, Idemitsu Co., Ltd², Kochi Univ. of Tech.³, CREST⁴)

5:30 PM - 5:45 PM

△ [17p-B4-16] Influence of Back Channel on the Characteristics of Amorphous InZnO Thin Film Transistors Fabricated by Solution Process

^○Yukihiro Osada¹, Yasuaki Ishikawa¹, Li Lu¹, Yukiharu Uraoka¹ (NAIST¹)

5:45 PM - 6:00 PM

△ [17p-B4-17] High stable amorphous InAlZnO-based thin-film transistor

^○Satoshi Urakawa¹, Yasuaki Ishikawa^1,2, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

6:00 PM - 6:15 PM

[17p-B4-18] High On/Off-ratio P-type Oxide-based FETs Integrated onto Cu-interconnects

^○Hiroshi Sunamura¹, Kishou Kaneko¹, Naoya Furutake¹, Shinobu Saito¹, Mitsuru Narihiro¹, Nobuyuki Ikarashi¹, Masami Hane¹, Yoshihiro Hayashi¹ (Renesas¹)