Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D7-1~11] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [20a-D7-1] Effect of N₂ Addition to Cl₂ Plasma for GaN Etching

^○(M2)Zecheng Liu¹, Jongyun Park¹, Jiadong Cao¹, Takashi Kako¹, Kenji Ishikawa¹, Osamu Oda¹, Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori^{1
(Nagoya Univ.¹)}

9:15 AM - 9:30 AM

[20a-D7-2] Study of the cleaning solution to suppress the excess oxidation of the GaN surface

^○Yukihiro Tsuji^1,2, Tsukuru Katsuyama¹, Akinobu Teramoto², Yasuyuki Shirai², Shigetoshi Sugawa², Tadahiro Ohmi² (Sumitomo Electric Industries, Ltd.¹, Tohoku Univ.²)

9:30 AM - 9:45 AM

[20a-D7-3] Influence of ozone introduction on electrical characteristics of MIS-structures with ALD-Al₂O₃

^○(M1)Yusuke Yoshida¹, Joseph Freedsman¹, Toshiharu Kubo¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

9:45 AM - 10:00 AM

△ [20a-D7-4] Effect of high pressure water vapor annealing for ALD-Al₂O₃ film on n-GaN

^○Koji Yoshitsugu¹, Tomoaki Umehara¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, JST-CREST²)

10:00 AM - 10:15 AM

[20a-D7-5] Improvement of Al₂O₃/InAlN interface properties through two-step ALD process interrupted by high-temperature annealing

^○Takuma Nakano¹, Masahito Chiba¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

10:15 AM - 10:30 AM

△ [20a-D7-6] Characterization of MOS Interface States and their Effects on Electrical Properties in GaN-based MOS-HEMTs

^○Yujin Hori¹, Zenji Yatabe¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[20a-D7-7] Effect of H plasma treatment on p-GaN Schottky diodes

^○Taro Aoki¹, Tomohiro Yoshida², Tetsuya Suemitsu², Naoki Kaneda³, Tomoyoshi Mishima³, Kenji Shiojima¹ (Univ. of Fukui¹, Tohoku Univ.², Hitachi Cable³)

11:00 AM - 11:15 AM

[20a-D7-8] Evaluation of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates

^○(M1)Yuhei Kihara¹, Shiojima Kenzi¹, Toshitika Aoki¹, Naoki Kaneda², Tomoyoshi Mishima¹ (Univ.of Fukui¹, Hitachi Cable²)

11:15 AM - 11:30 AM

[20a-D7-9] Effect of intermediate AlGaN layer on properties of GaN Schottky diodes

^○(M2)Wancheng Ma¹, Tamotu Hashizume^1,2 (Graduate School of Information Science and Technology, Hokkdaido Univ¹, JST-CREST²)

11:30 AM - 11:45 AM

△ [20a-D7-10] GaN Schottky Barrier Diode with TiN Electrode for Microwave Power Rectification

^○(M1C)Yuki Itai¹, Akinori Kishi¹, Liuan Li¹, Takayuki Shiraishi¹, Kazuhito Fukui¹, Qiang Liu¹, Jin-Ping Ao¹, Yasuo Ohno² (STS Univ. Tokushima¹, e-Device Inc²)

11:45 AM - 12:00 PM

△ [20a-D7-11] Current collapse characterization of AlGaN/GaN HEMT using a dual-gate structure

^○Kenya Nishiguchi¹, Joel T. Asubar¹, Tamotsu Hashizume^1,2 (RCIQE Hokkaido Univ.¹, JST-CREST²)