Oral presentation

[16p-B3-1~10] 17.1 Growth technology

Mon. Sep 16, 2013 4:00 PM - 6:30 PM B3 (TC2 1F-105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:00 PM - 4:15 PM

[16p-B3-1] Low Temperature Growth of SWNT using Alcohol Gas Source Method with Pt catalyst deposited by EB gun

^○Hiroki Kondo¹, Ghosh Ranajit¹, Shigeya Naritsuka¹, Takahiro Maruyama¹, Sumio Iijima^1,2 (Meijo Univ.¹, AIST²)

4:15 PM - 4:30 PM

[16p-B3-2] In-situ TEM Observation of Defect Formation during Carbon Nanotube Growth

^○Hideto Yoshida¹, Seiji Takeda¹ (ISIR, Osaka Univ.¹)

4:30 PM - 4:45 PM

[16p-B3-3] Analysis of CNT film grown by Slope control of temperature profile [STEP]

^○Akio Kawabata¹, Tomo Murakami¹, Mizuhisa Nihei¹, Naoki Yokoyama¹ (AIST GNC¹)

4:45 PM - 5:00 PM

△ [16p-B3-4] Chemical state dependence of high-density CNT growth catalyst on heating time and support material

^○(PC)Akito Takashima¹, Yudai Izumi¹, Eiji Ikenaga¹, Takayuki Muro¹, Akio Kawabata², Tomo Murakami², Mizuhisa Nihei², Naoki Yokoyama² (JASRI¹, AIST²)

5:00 PM - 5:15 PM

△ [16p-B3-5] Carbon Nanotubes and Vertical, Longitudinal, and Lateral Multilayer Graphene Growth by a Novel Heat-Beam assisted Thermal CVD

^○(D)Kazuyuki Ito¹, Ryosuke Sawabe¹, Yuji Awano¹ (Keio Univ.¹)

5:15 PM - 5:30 PM

[16p-B3-6] Growth of carbon nanotube by laser alcohol CVD on Si substrate

^○Shunichi Umeda¹, Kouichi Akahane², Hideyuki Sotobayashi¹ (Aoyama Gakuin Univ¹, NICT²)

5:30 PM - 5:45 PM

[16p-B3-7] Effect of shell thickness in the synthesis of vertically-aligned carbon nanotubes grown from Fe₃O₄@SiO₂ core-shell nanoparticles

^○Takehiro Sugawara¹, Masaaki Ohashi¹, Osamu Kanasugi¹, Naoki Kuriyama¹, Masahito Kushida¹ (Chiba Univ.¹)

5:45 PM - 6:00 PM

[16p-B3-8] Acetone effect on growth of highly spinnable MWCNT array

^○Akio Nakamura¹, Hitoshi Satou³, Tauto Nakanishi³, Takashi Katou³, Kyouichi Tomita³, Takayuki Nakano¹, Hidenori Mimura², Yoku Inoue¹ (Shizuoka Univ. Eng¹, Shizuoka Univ. RIE², JNC³)

6:00 PM - 6:15 PM

[16p-B3-9] The development of CNT growth using liquid source as new catalyst precursor

^○Yuki Usuda¹, Takahiro Kikuchi¹, Hitoshi Sato³, Tauto Nakanishi³, Takashi Kato³, Kyoichi Tomita³, Hidenori Mimura², Takayuki Nakano¹, Yoku Inoue¹ (Shizuoka Univ. Eng.¹, Shizuoka Univ. RIE², JNC³)

6:15 PM - 6:30 PM

[16p-B3-10] Synthesis of nano-carbon materials by an in-liquid CVD process

^○Hiroyuki Yokoi¹, Kazuki Otsubo², Shota Hirayama² (Kumamoto Univ.¹, Kumamoto Univ.²)

Oral presentation

[17a-B1-1~11] 17.1 Growth technology

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B1 (TC2 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

△ [17a-B1-1] Characterization of the Electrical Properties and Raman Mapping for Graphene Films Deposited by Microwave Plasma-CVD

^○Yuki Okigawa^1,2, Ryuichi Kato², Masahiro Tani², Takatoshi Yamada^1,2, Masatou Ishihara^1,2, Masataka Hasegawa^1,2 (AIST¹, TASC²)

9:15 AM - 9:30 AM

[17a-B1-2] Synthesis of Few Layers Graphene Domains on Copper Substrates by Surface Wave Assisted Microwave Plasma CVD

^○Hare Aryal¹, Madhu Kayastha¹, Hideo Uchida¹, koichi Wakita¹, Masayoshi Umeno¹ (Chubu Univ.¹)

9:30 AM - 9:45 AM

[17a-B1-3] High-quality graphene synthesis of plasma CVD using extremely low concentration of carbon source

^○Ryuichi Kato¹, Kazuo Tsugawa¹, Masatou Isihara^1,2, Yuki Okigawa^1,2, Takatoshi Yamada^1,2, Masataka Hasegawa^1,2 (TASC¹, AIST NTRC²)

9:45 AM - 10:00 AM

[17a-B1-4] Effect of iron atoms on synthesis of nitrogen doped graphene with phthalocyanine

^○Hiroto Yamada¹, Seiji Obata¹, Koichiro Saiki¹ (The University of Tokyo¹)

10:00 AM - 10:15 AM

[17a-B1-5] Nitrogen-doping to Graphene Oxide Using RF Plasma

^○Keishi Akada¹, Hiroshige Tanaka², Tomoo Terasawa², Gaku Imamura¹, Seiji Obata¹, Koichiro Saiki^1,2 (Grad. Sch. of Frontier Science¹, Grad. Sch. of Science²)

10:15 AM - 10:30 AM

[17a-B1-6] Preparation of Sulfur-Doped Graphene by Solution Process

^○Hiroshige Tanaka¹, Seiji Obata², Koichiro Saiki^1,2 (The Univ. of Tokyo¹, The Univ. of Tokyo²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[17a-B1-7] Growth of Graphene from Surface Decomposition of SiC by Molecular Dynamics Simulation

^○Ryosuke Iguchi¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Masato Inoue², Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM, Kyushu Univ.²)

11:00 AM - 11:15 AM

[17a-B1-8] Initial stage of 1st graphene layer growth on SiC(0001) and role of step

^○Hiroyuki Kageshima¹, Hiroki Hibino¹, Hiroshi Yamaguchi¹, Masao Nagase² (NTT Basic Research Labs.¹, Univ. Tokushima²)

11:15 AM - 11:30 AM

[17a-B1-9] In-plane structural analysis of graphene on SiC (000-1) revealed by TEM observations

^○Wataru Norimatsu¹, Jun Kuroki¹, Michiko Kusunoki² (Nagoya Univ.¹, Nagoya Univ.²)

11:30 AM - 11:45 AM

[17a-B1-10] Uniform single-layer graphene growth by surface structure control

^○Takehi Nakashima¹, Toshio Okumura¹, Takuto Tao¹, Ryong-Sok O¹, Muneaki Iguchi¹, Masao Nagase¹ (Tokushima Univ.¹)

11:45 AM - 12:00 PM

△ [17a-B1-11] Damage-free transfer of graphene grown on SiC

^○Shinichi Tanabe¹, Kazuaki Furukawa¹, Hiroki Hibino¹ (NTT Basic Research Labs.¹)

Oral presentation

[17p-B1-1~13] 17.1 Growth technology

Tue. Sep 17, 2013 1:00 PM - 4:30 PM B1 (TC2 1F-101)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[17p-B1-1] Optical microscope observation of growth of CVD graphene

^○Tomoo Terasawa¹, Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

1:15 PM - 1:30 PM

▲ [17p-B1-2] Graphene growth on polycrystalline Cu foil using solid carbon source by atmospheric pressure chemical vapor deposition

^○Subash Sharma¹, Golap Kalita¹, Remi Papon¹, Emre Ayhan¹, Ryo Hirano¹, Masaki Tanemura¹ (Nagoya Inst. of tech¹)

1:30 PM - 1:45 PM

[17p-B1-3] Investigation on formation mechanism of graphene from graphene oxide

^○Seiji Obata¹, Hiroshige Tanaka², Koichiro Saiki^1,2 (Univ. of Tokyo¹, Univ. of Tokyo²)

1:45 PM - 2:00 PM

[17p-B1-4] Ripple Structure of Graphene on Ru(0001) Surface Ⅱ

^○(P)Yuya Murata¹, Satoru Suzuki¹, Fumihiko Maeda¹, Hiroki Hibino¹ (NTT Basic Research Lab.¹)

2:00 PM - 2:15 PM

[17p-B1-5] Synthesis of multi-layer graphene with epitaxial catalyst films and its dependence on catalysts

^○Daiyu Kondo¹, Haruhisa Nakano¹, Bo Zhou¹, Ichiro Kubota¹, Makoto Takahashi¹, Motonobu Sato¹, Kenjiro Hayashi¹, Shintaro Sato¹, Naoki Yokoyama¹ (GNC, AIST¹)

2:15 PM - 2:30 PM

▲ [17p-B1-6] Synthesis of graphene on silver foil by chemical vapour deposition as a tarnish resistant coating

^○Muhammed Emre Ayhan¹, Kalita Golap¹, Sharma Subash¹, Shinde Sachin¹, Masaki Tanemura¹ (Nagoya Inst. of tech¹)

2:30 PM - 2:45 PM

[17p-B1-7] Initial Stage of Growth under Graphitization with Liquid Gallium

^○(M2)Yuuya Kajiwara^1,2, Tainchen Dong^1,2, Naoto Ito², Katsuhisa Murakami^1,2, Jun-ichi Fujita^1,2 (Tsukuba Research Center for Interdisciplinary Materials Science¹, Univ. Tsukuba Institute of Applied Physics²)

2:45 PM - 3:00 PM

[17p-B1-8] Substrate Dependence of Potential-Energy Surface of Graphene on Transition-Metals

^○Kenji Toyoda¹, Katsuya Nozawa¹, Nozomu Matsukawa¹, Shigeo Yoshii¹ (Panasonic¹)

3:00 PM - 3:15 PM

[17p-B1-9] Formation of a transparent electroconductive film derived from fullerene thin film.

^○Ryuicih Arai¹, Takahiro Minakawa², Toru Kuzumaki² (Graduate School of Tokai Univ.¹, Tokai Univ. of Engineering²)

3:15 PM - 3:30 PM

[17p-B1-10] Direct Synthesis of Graphene thin films on Glass Substrates at low Temperature

^○Sudip Adhikari¹, Hideo Uchida¹, Kouichi Wakida¹, Masayoshi Umeno¹ (Chubu Univ.¹)

3:30 PM - 3:45 PM

[17p-B1-11] Transfer-free Graphenes Synthesized from Metal-Carbon Hybrid Films and those Electrical Properties

^○Hisayoshi Oshima¹, Kenji Okeyui¹, Norikazu Hosokawa¹, Hiroki Hibino² (DENSO CO. Research Labs.¹, NTT Basic Research Labs.²)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

△ [17p-B1-12] Direct Graphene Synthesis on Insulating Surfaces by Laser Annealing

^○Keisuke Koshida¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Koichi Inoue¹, Kazuhiko Matsumoto¹ (ISIR, Osaka Univ.¹)

4:15 PM - 4:30 PM

△ [17p-B1-13] Controlling number of layers of graphene with binary metal catalysts

^○Yuichiro Takesaki¹, Masaharu Tsuji^1,2, Hiroki Ago^1,2 (Grad. Schl. Eng. Sci.¹, Inst. Mater. Chem. Eng²)

Oral presentation

[18a-B2-9~11] 17.1 Growth technology

Wed. Sep 18, 2013 11:15 AM - 12:00 PM B2 (TC2 1F-102)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

11:15 AM - 11:30 AM

[18a-B2-9] Improvement of synthesis conditions of carbon nanocoil synthesis for high yield

^○Koji Maruyama¹, Yoshiyuki Suda¹, Hideto Tanoue¹, Hirohumi Takikawa¹, Hitoshi Ue², Kazuki Shimizu³, Yoshito Umeda⁴ (tut¹, Tokai Carbon Co., Ltd², Shonan Plastics Mfg. Co., Ltd.³, Toho Gas Co.,Ltd.⁴)

11:30 AM - 11:45 AM

[18a-B2-10] Growth of novel CNFs with pulling carburized Fe artificially

^○Eiji Iida^1,2, Katsuhisa Murakami^1,2, Takeshi Hikata³, Soichiro Okubo³, Jun-ichi Fujita^1,2 (Univ. of Tsukuba¹, Tsukuba Research Center for Interdisciplinary Materials Science², Sumitomo Electric Industries³)

11:45 AM - 12:00 PM

▲ [18a-B2-11] Synthesis of carbon from organic waste for using as a photocathode in dye-sensitized solar cells

^○Karthikeyan Rajan¹, Navaneethan Mani¹, Archana Jayaram¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yasuhiro Hayakawa¹ (RIE Shizuoka Univ¹)

Sessions

17. Nanocarbon Technology » 17.1 Growth technology

[16p-B3-1~10] 17.1 Growth technology

△ [16p-B3-4] Chemical state dependence of high-density CNT growth catalyst on heating time and support material

△ [16p-B3-5] Carbon Nanotubes and Vertical, Longitudinal, and Lateral Multilayer Graphene Growth by a Novel Heat-Beam assisted Thermal CVD

[17a-B1-1~11] 17.1 Growth technology

△ [17a-B1-1] Characterization of the Electrical Properties and Raman Mapping for Graphene Films Deposited by Microwave Plasma-CVD

△ [17a-B1-11] Damage-free transfer of graphene grown on SiC

[17p-B1-1~13] 17.1 Growth technology

▲ [17p-B1-2] Graphene growth on polycrystalline Cu foil using solid carbon source by atmospheric pressure chemical vapor deposition

▲ [17p-B1-6] Synthesis of graphene on silver foil by chemical vapour deposition as a tarnish resistant coating

△ [17p-B1-12] Direct Graphene Synthesis on Insulating Surfaces by Laser Annealing

△ [17p-B1-13] Controlling number of layers of graphene with binary metal catalysts

[18a-B2-9~11] 17.1 Growth technology

▲ [18a-B2-11] Synthesis of carbon from organic waste for using as a photocathode in dye-sensitized solar cells