Improvement of switching characteristics in MoO<sub>x</sub>-ReRAM

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

Mon. Sep 16, 2013 2:30 PM - 6:00 PM D3 (MK 2F-201)

4:45 PM - 5:00 PM

^○(M1)Takahiro Hiroi¹, Akitoshi Nakane¹, Thana Sriviriyakul¹, Keisuke Takamizawa¹, Masashi Arita¹, Yasuo Takahashi¹ (IST, Hokkaido Univ.¹)

Keywords:抵抗変化型メモリ