The 74th JSAP Autumn Meeting,2013

Presentation information

Print

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17a-B3-1~11] 15.6 IV-group-based compounds

Tue. Sep 17, 2013 9:00 AM - 12:00 PM B3 (TC2 1F-105)

10:30 AM - 10:45 AM

[17a-B3-6] Analysis of linear oxide growth on 4H-SiC in thin film (<10 nm) region

○Richard Heihatiro Kikuchi1, Koji Kita1,2 (Univ. of Tokyo1, JST-PRESTO2)

Keywords:熱酸化膜,SiC,酸化過程