[17p-B4-1~18] Joint session K

[17p-B4-10] [Young Scientist Oral Presentation Award Speech](15 min.) Effect of fluorine contents in gate insulators on a-InGaZnO thin film transistors

^○Haruka Yamazaki¹, Yasuaki Ishikawa¹, Yoshihiro Ueoka¹, Satoshi Urakawa¹, Masaki Fujiwara², Eiji Takahashi², Yasunori Andoh², Yukiharu Uraoka¹ (NAIST¹, Nissin electric²)

Keywords:酸化物半導体,薄膜トランジスタ,フッ素