A Heterojunction Diode p-NiO/n-Si Formed by UV Oxidation of Ni on n-Si

Presentation information

Oral presentation

Joint session K » Joint session K

Tue. Sep 17, 2013 1:30 PM - 6:15 PM B4 (TC2 1F-106)

2:30 PM - 2:45 PM

^○(DC)Dongyuan Zhang¹, Kazuo Uchida¹, Shinji Nozaki¹ (Univ. of Electro-Communication¹)

Keywords:NiO,heterojunction diode,thin film device