Oral presentation

[16p-B4-1~8] Joint session K

Mon. Sep 16, 2013 4:00 PM - 6:00 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 4:15 PM

△ [16p-B4-1] Growth temperature dependence of (\overline{2}01) β-Ga₂O₃ homoepitaxy by PLD method

^○Akira Mukai¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui³, Akito Kuramata², Shigenobu Yamakoshi², Akira Ohtomo^1,4 (Tokyo Tech.¹, Tamura Corp.², Koha Co., Ltd.³, MCES⁴)

4:15 PM - 4:30 PM

[16p-B4-2] Investigation of thermal stability of β-Ga₂O₃(010) substrate surface at high temperatures

^○Takahiro Fukizawa¹, Chihiro Eguchi¹, Shoko Hanagata¹, Kazushiro Nomura¹, Ken Goto², Rie Togashi¹, Hisashi Murakami¹, Akito Kuramata², Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech¹, Tamura Co. Ltd.²)

4:30 PM - 4:45 PM

[16p-B4-3] Characterization on β-Ga₂O₃ Single Crystal Photoelectrodes

^○Takayoshi Oshima¹, Kenichi Kaminaga², Hisanori Mashiko¹, Akira Mukai¹, Kohei Sasaki³, Takekazu Masui⁴, Akito Kuramata³, Shigenobu Yamakoshi³, Akira Ohtomo^1,5 (Tokyo Tech¹, Univ. of Tokyo², Tamura Corp³, KOHA Co., Ltd⁴, MCES⁵)

4:45 PM - 5:00 PM

[16p-B4-4] Correlation between blue luminescence intensity and resistivity in β-Ga₂O₃ crystals

^○Takeyoshi Onuma^1-3, Shuhei Fujioka², Tomohiro Yamaguchi², Masataka Higashiwaki³, Kohei Sasaki^3,4, Tatekazu Masui⁵, Tohru Honda² (TNCT¹, Kogakuin Univ.², NICT³, Tamura Corp.⁴, Koha Co., Ltd.⁵)

5:00 PM - 5:15 PM

[16p-B4-5] Effects of Mg Doping on Optical ProPerties of β-Ga₂O₃

^○(M2C)Akira Nakazawa¹, Dai Yasukawa¹, Hirohumi Wakai¹, Hisaya Oda¹, Akio Yamanaka¹ (CIST¹)

5:15 PM - 5:30 PM

[16p-B4-6] Heterojunction Diodes Based on beta-Ga₂O₃ and SiC

^○Shinji Nakagomi¹, Syuhei Takahashi¹, Yoshihiro Kokubun¹ (Ishinomaki Senshu Univ.¹)

5:30 PM - 5:45 PM

△ [16p-B4-7] Study of zinc source applied to proposed new plasma processing

^○Naruhiro Mizuike¹, Haruhiko Himura¹, Shigefumi Okada², Akio Sanpei¹, Sadao Masamune¹ (Kyoto Inst. Tech.¹, Osaka Univ., Professor of Emeritus²)

5:45 PM - 6:00 PM

[16p-B4-8] Epitaxial growth of ZnGa₂O₄ films by mist chemical vapor deposition

^○Mifuyu Niwa¹, Akira Mukai¹, Takayoshi Oshima¹, Tomohumi Nagami², Toshihisa Suyama², Akira Ohtomo^1,3,4 (Tokyo Tech¹, Tokuyama Corp², MCES³, JST-ALCA⁴)

Poster presentation

[16p-P8-1~21] Joint session K

Mon. Sep 16, 2013 1:30 PM - 3:30 PM P8 (Davis Memorial Auditorium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[16p-P8-1] Characterization of low resistivity AZO thin films grown by RF sputtering under H₂ atmosphere

^○Masaki Tanaka^1,2, Kenji Yoshino² (Ube Material Industries, Ltd.¹, Miyazaki Univ.²)

1:30 PM - 3:30 PM

[16p-P8-2] Mechnism of low resistivity of Ga-doped ZnO films using DEZ solution by spray method

^○Akiko Ide¹, Akiko Mochihara¹, Kenji Yoshino¹, Minoru Oshima², Yujin Takemoto², Koji Toyota², Koichiro Inaba², Ken-ichi Haga², Toshio Naka², Kohichi Tokudome² (Univ. Miyazaki¹, Tosoh Finechem²)

1:30 PM - 3:30 PM

[16p-P8-3] Fabrication of ZnO thin films on spin-coated seed layers by aqueous solution method

^○Takuya Matsumoto¹, Koji Abe¹ (Nagoya institute of technology¹)

1:30 PM - 3:30 PM

[16p-P8-4] Properties of Nb doped TiO₂ thin film produced in Ar-N₂ gas

^○Sota Inoue¹, Yosuke Onishi¹, Shuhei Funaki¹, Yasuji Yamada¹ (Shimane Univ¹)

1:30 PM - 3:30 PM

[16p-P8-5] Resistivity in NTO/GZO bilayer film as a function of Anneal Temperature

^○Hiroki Kikuchi¹, Seiji Ichiyanagi¹, Syuhei Funaki¹, Yasuji Yamada¹ (Shimane Univ¹)

1:30 PM - 3:30 PM

[16p-P8-6] Examination of Relation between AZO Targets and Thin Films Deposited by Sputtering Method

^○Katsuki Kondou¹, Yuusuke Tomiguchi¹, Yuusuke Hara¹, Hidehiko Shimizu¹, Haruo Iwano¹, Takahiro Kawakami¹, Yasuo Fukushima¹, Koutarou Nagata¹, Nozomu Tsuboi¹, Takahiro Nomoto¹ (Niigata Univ.¹)

1:30 PM - 3:30 PM

[16p-P8-7] New formation techniques of texture-etched surface in transparent conducting AZO films prepared by magnetron sputtering

^○Toshinori Yamanaka¹, Jun-ichi Nomoto¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (KIT¹)

1:30 PM - 3:30 PM

[16p-P8-8] P-type Conduction Control of Homo-epitaxial Nitrogen Doped ZnO Films by Radical-Source Molecular Beam Epitaxy

^○Hiroe Shinya¹, Takurou Matsuo¹, Ryouta Kidera¹, Akimasa Akiyama¹, Takaaki Yukue¹, Takuya Masamoto¹, Keisuke Noda¹, Tomoki Abe¹, Hirohumi Kasada¹, Koushi Andou¹, Akihiro Okuyama¹ (Tottori Univ.¹)

1:30 PM - 3:30 PM

[16p-P8-9] Synthesis of ZnCdO Films by Sol-Gel Dip Method

Kohe Isago¹, ^○Takashi Yasuda¹ (Ishinomaki Senshu University¹)

1:30 PM - 3:30 PM

[16p-P8-10] Attempts of p-CuO/n-ZnO pn Hetero-junction Solar Cells Formation by Chemical Bath Deposition

^○Toshihiro Murakami¹, Masayuki Kitamine¹, Atushi Hyoudou², Tomoaki Terasako¹, Shou Sirakata¹ (Grad.School of Sci.&Eng.,Ehime Univ¹, Fac.Eng.,Ehime Univ²)

1:30 PM - 3:30 PM

△ [16p-P8-11] Drain-current DLTS study of ZnO TFT (2)

^○Msato Kubota¹, Yoshinori Oyaizu¹, Takahiro Mori¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (Univ. of Yamanashi¹)

1:30 PM - 3:30 PM

△ [16p-P8-12] Effect of defect states at backchannel region on device properties and reliability of a-InGaZnO TFT

^○Tatsuya Toda¹, Dapeng Wang¹, Jingxin Jiang¹, Phi Hung Mai¹, Mamoru Furuta¹ (Kochi Univ. of Tech.¹)

1:30 PM - 3:30 PM

[16p-P8-13] Ga2O3 films grown on GaN substrates by mist CVD

^○(M2)Daiki Tajimi¹, Yoshitaka Okuaki¹, Takumi Hatakeyama¹, Kentaro Kaneko², Sizuo Fujita², Takeyoshi Onuma^1,3, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, Kyoto Univ.², TNCT³)

1:30 PM - 3:30 PM

[16p-P8-14] Growth of SnO₂ Nanowires by Atmospheric-pressure CVD and Their Gas-Sensing Application

^○Toshiki Kurashige¹, Tomoaki Terasako¹, Akira Miyata², Masami Mori², Sho Shirakata¹, Yoshihiko Sadaoka³ (Grad.School of Sci.&Eng.,Ehime Univ.¹, Fac.Eng.,Ehime Univ.², Ehime Univ.³)

1:30 PM - 3:30 PM

[16p-P8-15] Carrier Transport Properties of Undoped CdO Films Grown by Atomospheric-pressure CVD

^○Ken Ohmae¹, Tomoaki Terasako¹, Motohiro Yamane², Akira Miyata², Sho Shirakata¹ (Grad. School of Sci. & Eng. Ehime Univ.¹, Fac. Eng. Ehime Univ.²)

1:30 PM - 3:30 PM

[16p-P8-16] ZnO Film Growth on Pyrolytic Graphite Sheet by Mist Chemical Vapor Deposition

^○Yuichiro Yamasaki¹, Kazuyuki Uno¹, Shunsuke Kake¹, Ikuhiro Furotani¹, Ichiro Tanaka¹ (Wakayama Univ.¹)

1:30 PM - 3:30 PM

[16p-P8-17] Evaluation of Defects in Crystalline IGZO Powder

^○Tokiyoshi Matsuda^1,2, Daiki Nishimoto¹, Kota Takahashi¹, Taiki Ueno¹, Mutsumi Kimura^1,2 (Ryukoku Univ.¹, Ryukoku Univ. JRCST²)

1:30 PM - 3:30 PM

[16p-P8-18] Luminescence properties of ZnO-based films deposited on metal thin films.

^○(M2)Takahiro Hirano¹, Shin-ichi Yamamoto¹, Hideki Yoshioka² (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

1:30 PM - 3:30 PM

▲ [16p-P8-19] Electrical Transport Properties of Self-buffered Anatase TiO₂

^○(D)Thantip Krasienapibal¹, Tomoteru Fukumura^1,2,3, Yasushi Hirose^1,2,3, Ryuta Sako⁴, Masanori Nagao⁴, Satoshi Watauchi⁴, Isao Tanaka⁴, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³, Univ. of Yamanashi⁴)

1:30 PM - 3:30 PM

△ [16p-P8-20] Anisotropic growth of ZnO nanorods and their electrical properties

^○(P)Kentaro Watanabe^1,2, Seungjin Oh¹, János Volk³, Takahiro Nagata¹, Yutaka Wakayama¹, Takashi Sekiguchi¹ (NIMS¹, Univ. of Tsukuba², MFA³)

1:30 PM - 3:30 PM

[16p-P8-21] Growh of Ga-doped ZnO Films by Atomospheric-pressure CVD under Alternate-source-supply and their Temperature Dependence of Carrier Tranport Properties

^○Shohei Fujimoto¹, Takashi Fujita², Tomoaki Terasako¹, Akira Miyata², Sho Shirakata¹ (Sci.&Eng.,Ehime Univ¹, Fac.Eng.,Ehime Univ²)

Oral presentation

[17a-B4-1~12] Joint session K

Tue. Sep 17, 2013 9:00 AM - 12:15 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-B4-1] Fabrication of crundum-structured In₂O₃ thin films by mist-CVD method

^○Norihiro Suzuki¹, Kentaro Kaneko¹, Shizuo Fujita¹ (Kyoto Univ.¹)

9:15 AM - 9:30 AM

[17a-B4-2] Syntheses of indium oxyfluoride (InO_xF_y) epitaxial thin films

^○Sohei Okazaki^1,2, Yasushi Hirose^1,2,3, Shoichiro Nakao^1,2, Chang Yang^1,2,3, Tetsuya Hasegawa^1,2,3 (KAST¹, JST-CREST², Univ. of Tokyo³)

9:30 AM - 9:45 AM

△ [17a-B4-3] Effects of Ar partial pressure during the sputtering deposition on properties of novel oxynitride semiconductor ZnInON fabricated by RF magnetron sputtering

^○Koichi Matsushima¹, Ryota Shimizu¹, Yamashita Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Giichiro Uchida¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,2 (Kyushu Univ.¹, JST-PRESTO²)

9:45 AM - 10:00 AM

[17a-B4-4] Crystalline structure of a ZnO film grown on a-plane sapphire substrate using high-energy H₂O generated by a catalytic reaction

^○Naoya Yamaguchi¹, Tomohiko Takeuchi¹, Eichi Nagatomi¹, Yasuhiro Tamayama¹, Kanji Yasui¹ (Nagaoka Univ. Technol.¹)

10:00 AM - 10:15 AM

[17a-B4-5] Nanofabrication of glass surface and observation of the initial growth towards realizing graphoepitaxy of ZnO

^○Masaaki Irino¹, Takayoshi Oshima¹, Akira Ohtomo^1,2,3 (Graduate School of Engineering, Tokyo Tech.¹, JST-ALCA², MCES³)

10:15 AM - 10:30 AM

[17a-B4-6] Study of oxygen source of ZnO thin film grown by halide vapor phase epitaxy

^○Naoto Kanzaki¹, Yuta Isa¹, Song-Yun Kang², Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Yusaku Kashiwagi², Akinori Koukitu¹ (Dept. of Appl. Chemistry, Tokyo Univ. of Agri. and Tech.¹, Tokyo Electron Ltd.²)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[17a-B4-7] Growth mechanism of ZnO films fabricated by atmospheric pressure plasma enhanced CVD

^○(D)Yukinori Nose¹, Tatsuru Nakamura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, SEKISUI CHEMICAL CO., LTD.²)

11:00 AM - 11:15 AM

[17a-B4-8] Growth of ZnO single-crystalline layer by UHV sputter epitaxy

^○Yuya Miyoshi¹, Yuki Hamada¹, Masayuki Takahashi¹, Hiroyuki Shinoda¹, Nobuki Mutukura¹ (Tokyo Denki University¹)

11:15 AM - 11:30 AM

[17a-B4-9] Growth of MgO single-crystalline layer by UHV sputter epitaxy

^○Masayuki Takahashi¹, Yuuki Hamada¹, Yuuya Miyoshi¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

11:30 AM - 11:45 AM

[17a-B4-10] Growth and control of Zn(Mg,Cd)O alloy orientation by RPE-MOCVD

Nobuaki Omura¹, Sanjay Mohanta¹, ^○Atsushi Nakamura¹, Jiro Temmyo¹ (Grad. School of Eng, Shizuoka Univ.¹)

11:45 AM - 12:00 PM

[17a-B4-11] Characteristics of Mg_xZn_1-xO:N films on ZnO substrates fabricated by the PARE method

^○Akira Nakagawa¹, Takami Abe¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Syuzo Takahashi¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², Tsutomu Ojima¹, Katsumi Aota¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Hiroshi Osada¹ (Iwate Univ.¹, Sendai Nat. College of Tech.²)

12:00 PM - 12:15 PM

[17a-B4-12] Band gap evaluation of ZnO substrate and ZnO related films by photocurrent analysis

^○Takami Abe¹, Akira Nakagawa¹, Tetsuya Chiba¹, Michiko Nakagawa¹, Shuzo Takahashi¹, Shigeki Chiba¹, Yasuhiro Kashiwaba², masahiro Daibo¹, Ikuo Niikura¹, Yasube Kashiwaba¹, Hiroshi Osada¹ (Iwate Univ.¹, Sendai Nat. College of Tech.²)

Oral presentation

[17p-B4-1~18] Joint session K

Tue. Sep 17, 2013 1:30 PM - 6:15 PM B4 (TC2 1F-106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch （12:15 PM - 1:30 PM）

1:30 PM - 1:45 PM

[17p-B4-1] Evaluation of Initial Growth Process for V-doped ZnO Thin Films

^○Tatsuya Mori¹, Hiroshi Chiba¹, Shuhei Okuda¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ. Graduate school of engineering¹)

1:45 PM - 2:00 PM

[17p-B4-2] Thermal Stability of Annealing V-Doped ZnO Tin Films

^○Hiroshi Chiba¹, Tatsuya Mori¹, Shuhei Okuda¹, Kenta Terui², Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (Tohoku Univ.¹, Tohoku Univ.²)

2:00 PM - 2:15 PM

[17p-B4-3] Evaluation of Structural Change of V-doped ZnO Thin Films through Thermal Annealing by Using Raman Spectroscopy

^○Shuhei Okuda¹, Hiroshi Chiba¹, Tatsuya Mori¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

2:15 PM - 2:30 PM

▲ [17p-B4-4] O2/Ni ratio dependence of structure and surface morphology in atmospheric pressure MOCVD grown NiO thin films

^○(M2)Teuku Muhammad Roffi¹, Kazuo Uchida¹, Shinji Nozaki¹ (Univ. of Electro-Communications¹)

2:30 PM - 2:45 PM

▲ [17p-B4-5] A Heterojunction Diode p-NiO/n-Si Formed by UV Oxidation of Ni on n-Si

^○(DC)Dongyuan Zhang¹, Kazuo Uchida¹, Shinji Nozaki¹ (Univ. of Electro-Communication¹)

2:45 PM - 3:00 PM

△ [17p-B4-6] Transparent conducting Ta:SnO₂ films sputtered on TiO₂-NbO₂ solid solution seed layers (Ⅱ)

^○Yuki Hattori¹, Syouitirou Nakao^2,3, Yosihiko Ninomiya¹, Atsushi Sato¹, Tetsuya Hasegawa^2,3, Naoomi Yamada¹ (Chubu Univ.¹, KAST², Univ. Tokyo³)

3:00 PM - 3:15 PM

[17p-B4-7] Effects of RF-superimposed DC magnetron sputtering on the properties of highly transparent conductive Al-doped ZnO films

^○Junichi Nomoto¹, Huaping Song¹, Hisao Makino¹, Seiichi Kishimoto^1,2, Tetsuya Yamamoto¹ (Research Inst. Kochi Univ. Tech¹, Kochi National College of Tech.²)

3:15 PM - 3:30 PM

[17p-B4-8] Contribution of hydrogen donors to conductive properties of ZnO and GZO films

^○Housei Akazawa¹ (NTT MI Labs.¹)

3:30 PM - 3:45 PM

△ [17p-B4-9] Point Defects in IGZO Thin Films Fabricated by a Screen Printing Method

^○Takaaki Morimoto¹, Ken-ichi Nomura², Nobuko Fukuda², Yoshimichi Ohki¹ (Waseda Univ.¹, FLEC, AIST²)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:15 PM

[17p-B4-10] [Young Scientist Oral Presentation Award Speech](15 min.) Effect of fluorine contents in gate insulators on a-InGaZnO thin film transistors

^○Haruka Yamazaki¹, Yasuaki Ishikawa¹, Yoshihiro Ueoka¹, Satoshi Urakawa¹, Masaki Fujiwara², Eiji Takahashi², Yasunori Andoh², Yukiharu Uraoka¹ (NAIST¹, Nissin electric²)

4:15 PM - 4:30 PM

[17p-B4-11] Fabrication of Thin Film Transistors of oxide semiconductor by using Microwave sintering

^○Hea Jeong Cheong¹, Shintaro Ogura¹, Heisuke Sakai¹, Masayuki Haranaka¹, Kazuhiko Takeuchi¹, Ritsuko Nagahata¹, Sei Uemura¹, Nobuko Fukuda¹ (National Institute of Advanced Industrial Science and Technology (AIST)¹)

4:30 PM - 4:45 PM

[17p-B4-12] Evaluation of Electronic States in In-Ga-Zn-O thin films by Photoinduced Transient Spectroscopy (PITS)

^○Hiroaki Tao¹, Yasuyuki Takanashi¹, Shinya Morita¹, Aya Hino¹, Hiroshi Goto¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd.¹)

4:45 PM - 5:00 PM

△ [17p-B4-13] Effect of Low Temperature Hydrogen Annealing in Amorphous-InGaZnO TFT

^○Yoshihiro Ueoka¹, Yasuaki Ishikawa¹, Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Yukihiro Osada¹, Masahiro Horita¹, Yukiharu Uraoka¹ (Nara Inst. of Sci. and Tech.¹)

5:00 PM - 5:15 PM

[17p-B4-14] Dependency of process condition in IGZO TFT Reliability

^○Ju Saka¹, Lijin Shou¹, Fumito Otake¹, Akira Taki¹, Masanori Shirai¹, Tomiyuki Yukawa¹, Masaki Takei¹, Junya Kiyota¹, Satoru Ishibashi¹, Kazuya Saito¹ (ULVAC Inc,¹)

5:15 PM - 5:30 PM

[17p-B4-15] Scale Dependence of Heating and Degradation Phenomena for Oxide Thin-Film Transistor

^○Satoshi Urakawa¹, Shigekazu Tomai², Masashi Kasami², Koki Yano², Wang Dapeng³, Mamoru Furuta³, Masahiro Horita^1,4, Yasuaki Ishikawa^1,4, Yukiharu Uraoka^1,4 (NAIST¹, Idemitsu Co., Ltd², Kochi Univ. of Tech.³, CREST⁴)

5:30 PM - 5:45 PM

△ [17p-B4-16] Influence of Back Channel on the Characteristics of Amorphous InZnO Thin Film Transistors Fabricated by Solution Process

^○Yukihiro Osada¹, Yasuaki Ishikawa¹, Li Lu¹, Yukiharu Uraoka¹ (NAIST¹)

5:45 PM - 6:00 PM

△ [17p-B4-17] High stable amorphous InAlZnO-based thin-film transistor

^○Satoshi Urakawa¹, Yasuaki Ishikawa^1,2, Masahiro Horita^1,2, Yukiharu Uraoka^1,2 (NAIST¹, CREST²)

6:00 PM - 6:15 PM

[17p-B4-18] High On/Off-ratio P-type Oxide-based FETs Integrated onto Cu-interconnects

^○Hiroshi Sunamura¹, Kishou Kaneko¹, Naoya Furutake¹, Shinobu Saito¹, Mitsuru Narihiro¹, Nobuyuki Ikarashi¹, Masami Hane¹, Yoshihiro Hayashi¹ (Renesas¹)

Sessions

Joint session K » Joint session K

[16p-B4-1~8] Joint session K

△ [16p-B4-1] Growth temperature dependence of (\overline{2}01) β-Ga2O3 homoepitaxy by PLD method

△ [16p-B4-7] Study of zinc source applied to proposed new plasma processing

[16p-P8-1~21] Joint session K

△ [16p-P8-11] Drain-current DLTS study of ZnO TFT (2)

△ [16p-P8-12] Effect of defect states at backchannel region on device properties and reliability of a-InGaZnO TFT

▲ [16p-P8-19] Electrical Transport Properties of Self-buffered Anatase TiO2

△ [16p-P8-20] Anisotropic growth of ZnO nanorods and their electrical properties

[17a-B4-1~12] Joint session K

△ [17a-B4-3] Effects of Ar partial pressure during the sputtering deposition on properties of novel oxynitride semiconductor ZnInON fabricated by RF magnetron sputtering

[17p-B4-1~18] Joint session K

▲ [17p-B4-4] O2/Ni ratio dependence of structure and surface morphology in atmospheric pressure MOCVD grown NiO thin films

▲ [17p-B4-5] A Heterojunction Diode p-NiO/n-Si Formed by UV Oxidation of Ni on n-Si

△ [17p-B4-6] Transparent conducting Ta:SnO2 films sputtered on TiO2-NbO2 solid solution seed layers (Ⅱ)

△ [17p-B4-9] Point Defects in IGZO Thin Films Fabricated by a Screen Printing Method

△ [17p-B4-13] Effect of Low Temperature Hydrogen Annealing in Amorphous-InGaZnO TFT

△ [17p-B4-16] Influence of Back Channel on the Characteristics of Amorphous InZnO Thin Film Transistors Fabricated by Solution Process

△ [17p-B4-17] High stable amorphous InAlZnO-based thin-film transistor

△ [16p-B4-1] Growth temperature dependence of (\overline{2}01) β-Ga₂O₃ homoepitaxy by PLD method

▲ [16p-P8-19] Electrical Transport Properties of Self-buffered Anatase TiO₂

△ [17p-B4-6] Transparent conducting Ta:SnO₂ films sputtered on TiO₂-NbO₂ solid solution seed layers (Ⅱ)