2:45 PM - 3:00 PM
△ [17p-B5-8] Investigation of EOT scaling of HfO2/Al2O3/SiGe gate stack by plasma post-nitridation
Keywords:SiGe,MOS界面,ECRプラズマ後窒化
Oral presentation
13. Semiconductors A (Silicon) » 13.3 Insulator technology
Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)
2:45 PM - 3:00 PM
Keywords:SiGe,MOS界面,ECRプラズマ後窒化