[17p-P7-1~15] 15.4 III-V-group nitride crystals

[17p-P7-2] AlN interlayer deposition temperature dependence of MOVPE growth of GaN on (110)Si

^○Kengo Nawa¹, Tadashi Mitsunari¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Reseach Center²)

Keywords:GaN,(110)Si,AlN