The 74th JSAP Autumn Meeting,2013

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Oral presentation

13. Semiconductors A (Silicon) » 13.2 Semiconductor surfaces

[18p-C1-1~13] 13.2 Semiconductor surfaces

Wed. Sep 18, 2013 1:00 PM - 4:30 PM C1 (TC3 1F-101)

4:15 PM - 4:30 PM

[18p-C1-13] Influence of static charge on ILD layer characeristic during the cmp wetting process

○Tomoatsu Ishibashi1, Yoichi Shiokawa1, Katsuhide Watanabe1 (EBARA CORPORATION1)

Keywords:ウェーハ洗浄,帯電,絶縁膜