Growth and characterizations of GaN on 4-in.-diameter Si(110) substrates by MOCVD

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2013 9:00 AM - 12:00 PM B5 (TC2 2F-201)

9:30 AM - 9:45 AM

^○Xu Qiang Shen¹, Tokio Takahashi¹, Toshihide Ide¹, Mituaki Shimizu¹ (AIST¹)

Keywords:窒化物