[19a-C10-1~9] 13.4 Interconnection technology

[19a-C10-3] Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation

^○Jinhan Song¹, Kazuki Matsumoto¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:シリサイド,ナノワイヤ