[19a-C8-1~12] 13.6 Silicon devices / Integration technology

[19a-C8-1] [Young Scientist Oral Presentation Award Speech](15 min.) Drain-Current Fluctuation during Dynamic Gate Bias in Si MOSFETs due to Random Telegraph Noise

^○Wei Feng^1,2, Keisaku Yamada^1,2, Kenji Ohmori^1,2 (Univ. of Tsukuba¹, JST-CREST²)

Keywords:ランダムテレグラフノイズ,ドレイン電流変動,MOSFET