Analysis of Multi-Trap Random Telegraph Noise Using Trap Charging History (I):Judgment of the Number and Charging Conditions of the Oxide Traps

Toshiaki Tsuchiya

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

[19a-C8-1~12] 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 9:00 AM - 12:15 PM C8 (TC3 2F-201)

9:15 AM - 9:30 AM

[19a-C8-2] Analysis of Multi-Trap Random Telegraph Noise Using Trap Charging History (I):Judgment of the Number and Charging Conditions of the Oxide Traps

^○Toshiaki Tsuchiya¹, Naoyoshi Tamura², Akihito Sakakidani², Kenichiro Sonoda², Masayuki Kamei², Shinya Yamakawa², Sumio Kuwabara² (Shimane Univ.¹, STARC²)

Keywords:RTN

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