A Study on Strain Induced Random Telegraph Noise Suppression in pMOSFETs

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.6 Silicon devices / Integration technology

Thu. Sep 19, 2013 9:00 AM - 12:15 PM C8 (TC3 2F-201)

9:45 AM - 10:00 AM

^○JIEZHI CHEN¹, Yusuke Higashi¹, Izumi Hirano¹, Yuichiro Mitani¹ (Toshiba R&D Center¹)

Keywords:RTS ノイズ, 歪み, MOSFET