[19a-C8-1~12] 13.6 Silicon devices / Integration technology

[19a-C8-9] Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V

^○Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Hirofumi Shinohara², Toshiaki Iwamatsu², Hidekazu Oda², Nobuyuki Sugii², Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

Keywords:SOTB,SRAM,ばらつき