[19a-P5-1~14] 13.5 Si process technology

[19a-P5-10] Low-temperature activation of boron in silicon by soft X-ray irradiation using cooling sample holder

^○Heya Akira¹, Kusakabe Fumito¹, Maruyama Yuki¹, Matsuo Naoto¹, Kanda Kazuhiro², Noguchi Takashi³ (Dept. Mat. Sci. Chem. Univ. of Hyogo¹, LASTI Univ. of Hyogo², The Univ. of Ryukyu³)

Keywords:軟Ｘ線,活性化,シート抵抗