[19a-P5-1~14] 13.5 Si process technology

[19a-P5-13] Improvement of activation rate of epitaxially grown n⁺-Ge:P and reduction of contact resistance between Ti electrode and Ge:P layer

^○Yoshihiko Moriyama^1,2, Yuuichi Kamimuta¹, Yoshiki Kamata¹, Keiji Ikeda¹, Shotaro Takeuchi², Yoshiaki Nakamura², Akira Sakai², Tsutomu Tezuka¹ (GNC-AIST¹, Osaka Univ.²)

Keywords:Ge,in-situ doped epitaxy,コンタクト抵抗