[19p-B4-1~21] 13.5 Si process technology

△ [19p-B4-18] Low-contact resistance and Fermi-level depinning in metal/n-Ge junction by inserting W-encapsulating Si clusters

^○Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama^1,3 (Inst. of Appl. Phys. Univ. of Tsukuba¹, AIST-Nanoelectronics Research Institute², AIST³)

Keywords:ショットキー,Ge,接触抵抗